Semiconductor device, electronic component, and electronic device

ABSTRACT

To provide a semiconductor device including element layers that are stacked. A first wiring layer and a second wiring layer are stacked between a first element layer and a second element layer. A third wiring layer and a fourth wiring layer are stacked over the second element layer. Transistors of logic cells are provided in the first element layer. Wirings of the logic cells are provided in the first wiring layer or the second wiring layer. Input ports and output ports of the logic cells are provided in the third wiring layer. The input port of one of the logic cells is connected to the output port of another logic cell through the wiring of the third wiring layer or the fourth wiring layer. Connecting the logic cells through the wiring layers over the second element layer improves the efficiency of steps of arranging and connecting the logic cells.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/014,081, filed Feb. 3, 2016, now allowed, which claims the benefit ofa foreign priority application filed in Japan as Serial No. 2015-022933on Feb. 9, 2015, both of which are incorporated by reference.

TECHNICAL FIELD

The specification, drawings, and claims of this application (hereinafterreferred to as “this specification and the like”) disclose, for example,a semiconductor device, an electronic component, an electronic device,operating methods thereof, and manufacturing methods thereof. Examplesof a technical field of one embodiment of the present invention includea semiconductor device, a storage device, a processing unit, a switchcircuit (e.g., a power switch and a wiring switch), a display device, aliquid crystal display device, a light-emitting device, a lightingdevice, a power storage device, an input device, an imaging device, adriving method thereof, and a manufacturing method thereof.

BACKGROUND ART

An example of a method for designing a semiconductor device such as SOCis a standard cell method. In this designing method, a plurality ofcells (also referred to as logic cells or standard cells, for example)are prepared for individual functions, and a semiconductor device isfabricated using them as its components. In the case of a standard cellmethod, steps of arranging cells and connecting wirings between thecells are performed with an automatic placer and router.

A variety of semiconductor devices that take advantage of the extremelylow off-state current of a transistor whose semiconductor region isformed using an oxide semiconductor (hereinafter, such a transistor maybe referred to as an OS transistor) have been proposed.

For example, Patent Documents 1 and 2 each disclose a storage circuitusing an OS transistor. Non-Patent Document 1 discloses a processor thatis capable of power gating and in which backup circuits using OStransistors are provided in a flip-flop and an SRAM. Patent Document 3discloses a semiconductor device using a combination of a standard cellincluding a Si transistor and an OS transistor and a standard cellincluding a Si transistor.

REFERENCE Patent Documents

-   [Patent Document 1] Japanese Published Patent Application No.    2011-187950-   [Patent Document 2] Japanese Published Patent Application No.    2013-008437-   [Patent Document 3] Japanese Published Patent Application No.    2013-243351

Non-Patent Document

-   [Non-Patent Document 1] H. Tamura et al., “Embedded SRAM and    Cortex-M0 Core with Backup Circuits Using a 60-nm Crystalline Oxide    Semiconductor for Power Gating,” IEEE COOL Chips XVII, April 2014.

DISCLOSURE OF INVENTION

A novel semiconductor device, an operating method for the novelsemiconductor device, or a manufacturing method for the novelsemiconductor device is provided. Alternatively, a novel semiconductordevice including at least two element layers that are stacked, anoperating method for the novel semiconductor device, or a manufacturingmethod for the novel semiconductor device is provided. Alternatively, asemiconductor device capable of power gating or an operating method forthe semiconductor device is provided. Alternatively, a method thatallows efficient designing of a semiconductor device is provided.

Note that the description of a plurality of objects does not precludethe existence of each object. Note that one embodiment of the presentinvention does not necessarily achieve all the objects listed above.Other objects will be apparent from and can be derived from thedescription of the specification, the drawings, the claims, and thelike, and such objects could be objects of one embodiment of the presentinvention.

(1) One embodiment of the present invention is a semiconductor deviceincluding a plurality of logic cells. The semiconductor device includesa first element layer, a second element layer, and first to k-th wiringlayers (k is an integer of greater than 3). Each of the first elementlayer and the second element layer is provided with a plurality oftransistors. The first to k-th wiring layers are stacked in this order.The first element layer is provided under the first wiring layer. Thesecond element layer is provided between the second wiring layer and thethird wiring layer. The transistors of the logic cells are provided inthe first element layer. Wirings of the logic cells are provided in thefirst wiring layer or the second wiring layer. An input port and anoutput port of the logic cell are provided in the third wiring layer.

In the above embodiment (1), the input port of one of the logic cellsmay be electrically connected to the output port of another logic cellthrough the wiring of the third wiring layer or through the wiring ofthe third wiring layer and the wiring of a fourth wiring layer.

In the above embodiment (1), the resistivities of the third to k-thwiring layers can be lower than those of the first wiring layer and thesecond wiring layer. Alternatively, the wirings of the first wiringlayer and the second wiring layer may contain a conductor containingtungsten, and the wirings of the third to k-th wiring layers may containa conductor containing copper or aluminum.

In the above embodiment (1), the plurality of transistors of the secondelement layer may each include an oxide semiconductor layer where achannel is formed.

In the above embodiment (1), the length of a wiring grid interval of thethird wiring layer is 1.5 times or 2 times that of a wiring gridinterval of the second wiring layer.

In the above embodiment (1), no second wiring layer may be provided.

Note that in this specification and the like, a semiconductor devicerefers to a device that can function by utilizing semiconductorcharacteristics, and means a circuit including a semiconductor element(e.g., a transistor, a diode, or a photodiode), a device including thecircuit, or the like. A chip including an integrated circuit, and anelectronic component, a storage device, a display device, alight-emitting element, a lighting device, and an electronic device eachincluding a chip in a package are examples of semiconductor devices andmay include semiconductor devices.

In this specification and the like, the description “X and Y areconnected” means that X and Y are electrically connected, X and Y arefunctionally connected, and X and Y are directly connected. Accordingly,without limitation to a predetermined connection relation, for example,a connection relation shown in drawings or text, another connectionrelation is included in the drawings or the text. Here, each of X and Ydenotes an object (e.g., a device, an element, a circuit, a wiring, anelectrode, a terminal, a conductive film, or a layer).

A transistor includes three nodes (terminals) called a gate, a source,and a drain. A gate is a node that controls the conduction state of atransistor. Depending on the channel type of the transistor or thelevels of potentials supplied to the terminals, one of nodes (an inputnode and an output node) functions as a source and the other functionsas a drain. Therefore, the terms “source” and “drain” areinterchangeable in this specification and the like. Furthermore, the twoterminals other than the gate may be referred to as a first terminal anda second terminal in this specification and the like.

A node can be referred to as a terminal, a wiring, an electrode, aconductive layer, a conductor, an impurity region, or the like,depending on a circuit configuration, a device structure, and the like.Furthermore, a terminal, a wiring, or the like can be referred to as anode.

Note that in many cases, a voltage refers to a potential differencebetween a certain potential and a reference potential (e.g., a groundpotential (GND) or a source potential). A voltage can be referred to asa potential and vice versa. Note that a potential has a relative value.Thus, “GND” does not necessarily mean 0 V.

In this specification and the like, ordinal numbers such as “first,”“second” and “third” are used to show the order in some cases.Alternatively, ordinal numbers such as “first,” “second” and “third” areused to avoid confusion among components in some cases, and do not limitthe number of components or do not limit the order. For example, it ispossible to replace the term “first” with the term “second” or “third”in describing one embodiment of the present invention.

Other matters regarding the description of this specification and thelike will be described in Embodiment 4.

A novel semiconductor device, an operating method for the novelsemiconductor device, or a manufacturing method for the novelsemiconductor device can be provided. Alternatively, a novelsemiconductor device including at least two element layers that arestacked, an operating method for the novel semiconductor device, or amanufacturing method for the novel semiconductor device can be provided.Alternatively, a semiconductor device capable of power gating or anoperating method for the semiconductor device can be provided.Alternatively, a semiconductor device can be efficiently designed.

Note that the description of the plurality of effects does not disturbthe existence of other effects. In one embodiment of the presentinvention, there is no need to achieve all the effects described above.In one embodiment of the present invention, an object other than theabove objects, an effect other than the above effects, and a novelfeature will be apparent from the description of the specification andthe drawings.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A to 1D are schematic diagrams illustrating structural examplesof a semiconductor device and logic cells.

FIGS. 2A to 2D are schematic diagrams illustrating structural examplesof a semiconductor device and logic cells.

FIGS. 3A and 3B each illustrate a layout example of an inverter cell.

FIGS. 4A to 4F are circuit diagrams each illustrating a combinationexample of a logic circuit and an oxide semiconductor transistor (oxidesemiconductor transistors).

FIG. 5 is a cross-sectional view schematically illustrating a layeredstructure of a semiconductor device.

FIG. 6 is a block diagram illustrating a configuration example of aprocessing unit.

FIG. 7 is a block diagram illustrating a configuration example of aprocessor core.

FIG. 8 is a circuit diagram illustrating a configuration example of aflip-flop.

FIG. 9 is a timing chart showing an operation example of a flip-flop.

FIG. 10 is a timing chart showing an operation example of a flip-flop.

FIG. 11 schematically illustrates a device structure example of aflip-flop.

FIG. 12A is a flow chart showing an example of a method formanufacturing an electronic component, and FIG. 12B is a perspectiveschematic diagram illustrating a structural example of the electroniccomponent.

FIGS. 13A to 13F each illustrate a structural example of an electronicdevice.

FIG. 14A is a top view illustrating a structural example of an OStransistor, FIG. 14B is a cross-sectional view along y1-y2 in FIG. 14A,FIG. 14C is a cross-sectional view along x1-x2 in FIG. 14A, and FIG. 14Dis a cross-sectional view along x3-x4 in FIG. 14A.

FIG. 15A is a partly enlarged view of FIG. 14B, and FIG. 15B is anenergy band diagram of an OS transistor.

FIGS. 16A to 16C are cross-sectional views each illustrating astructural example of an OS transistor.

FIGS. 17A and 17B are cross-sectional views illustrating a structuralexample of a transistor.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be described below. Note thatone embodiment of the present invention is not limited to the followingdescription. It will be readily appreciated by those skilled in the artthat modes and details of the present invention can be modified invarious ways without departing from the spirit and scope of the presentinvention. Therefore, one embodiment of the present invention should notbe construed as being limited to the following description of theembodiments.

Any of the embodiments described below can be combined as appropriate.In addition, in the case where some structural examples (including amanufacturing method, an operating method, and the like) are given inone embodiment, any of the structural examples can be combined asappropriate, and any of the structural examples can be combined with oneor more structural examples described in the other embodiments.

In this specification, a high power supply potential VDD may beabbreviated to a potential VDD, VDD, or the like, for example. The sameapplies to other components (e.g., a signal, a voltage, a potential, acircuit, an element, an electrode, and a wiring).

Embodiment 1 <<Structural Example 1 of Semiconductor Device>>

Here, a semiconductor device in which two element layers are stackedwill be described. FIG. 1A schematically illustrates a layered structureof a semiconductor device. A semiconductor device 100 includes twoelement layers DE-1 and DE-2, two wiring layers MA-1 and MA-2, and kwiring layers MB-1 to MB-k (k is an integer of greater than 1). Thewiring layers MA-1, MA-2, and MB-1 to MB-k are stacked in this order.The element layer DE-2 is stacked over the element layer DE-1. Thewiring layers MA-1 and MA-2 are provided between the element layer DE-1and the element layer DE-2. The wiring layers MB-1 to MB-k are stackedover the element layer DE-2.

The wiring layers MA-1, MA-2, and MB-1 to MB-k are each provided with aplurality of wirings. The element layers DE-1 and DE-2 are each providedwith a plurality of transistors. The element layers DE-1 and DE-2 can beprovided with a resistor, a capacitor, a diode, and the like in additionto the transistors.

In the semiconductor device 100, an interlayer insulating layer isprovided between two adjacent wiring layers so as to isolate the twolayers from each other. To electrically connect the wiring in an upperlayer and the wiring in a lower layer, the interlayer insulating layeris provided with a plug. Similarly, an interlayer insulating layer isprovided also between the element layer and the wiring layer that areadjacent to each other, and the elements of the element layer and thewirings of the wiring layer are connected to each other by the plug.

<Element Layers>

The element layers DE-1 and DE-2 are formed through different processes;thus, the device structure, materials of components, or the like of thetransistor of the element layer DE-1 (hereinafter referred to as atransistor DE1) can be different from that of the transistor of theelement layer DE-2 (hereinafter referred to as a transistor DE2).

For example, the transistor DE1 can be formed over a semiconductorsubstrate. As the semiconductor substrate, a semiconductor substrate ofa Group 14 element such as silicon, germanium, or the like, or acompound semiconductor substrate of silicon carbide, silicon germanium,gallium arsenide, indium phosphide, zinc oxide, or gallium oxide can beused, for example. The semiconductor substrate may be either a bulksemiconductor substrate or a silicon on insulator (SOI) substrate inwhich a semiconductor substrate is provided with a semiconductor layerwith an insulating region therebetween. The crystal structure of thesemiconductor substrate is preferably a single crystal structure or apolycrystalline structure. A semiconductor region of the transistor DE1depends on a material and the crystal structure of the semiconductorsubstrate.

A semiconductor region of the transistor DE2 is formed over the wiringlayer MA-2 using a semiconductor deposited by a gas phase method. Asemiconductor included in the semiconductor region is roughly dividedinto a single crystal semiconductor and a non-single-crystalsemiconductor. As the non-single-crystal semiconductor, apolycrystalline semiconductor, a microcrystalline semiconductor, anamorphous semiconductor, and the like are given. As a semiconductormaterial, a Group 14 semiconductor containing one kind or a plurality ofkinds of Group 14 elements such as Si, Ge, and C (e.g., silicon,germanium, silicon carbide, or silicon germanium), an oxidesemiconductor (e.g., an In—Ga—Zn oxide), a compound semiconductor, andthe like are given.

In the case where a semiconductor region of the transistor DE2 is formedof silicon, the semiconductor region can be formed using amorphoussilicon deposited by a vapor deposition method, a sputtering method, orthe like, or polycrystalline silicon obtained by crystallizing amorphoussilicon, for example. For the crystallization of amorphous silicon, heattreatment, laser irradiation treatment, or the like can be used.Alternatively, the semiconductor region of the transistor DE2 can beformed using an oxide semiconductor deposited by a vapor depositionmethod, a sputtering method, or the like. In this case, the transistorDE2 is an OS transistor.

<Logic Cell>

The semiconductor device 100 includes one or more circuits composed of aplurality of logic cells 10. FIG. 1B schematically illustrates thestructure of the logic cell 10. The logic cell 10 includes one or moretransistors, a plurality of wirings, a port A1, and a port Y1. The portA1 is an input port, and a port Y1 is an output port.

In the logic cell 10, a plurality of transistors are provided in theelement layer DE-1. The plurality of transistors are electricallyconnected through the wiring provided in the wiring layer MA-1 or thewiring layer MA-2 so that a logic circuit 10 a with a predeterminedprocessing function is constructed.

The logic circuit 10 a has a function of processing data of the port A1and outputting the processed data from the port Y1. There is noparticular limitation on the configuration of the logic circuit 10 a.For example, a basic logic gate circuit such as an inverter circuit or aNAND circuit, a flip-flop, a latch circuit, a counter, a multiplexer, orthe like can be used. Alternatively, a complicated logic circuit such asan arithmetic unit can be used.

Although the number of input ports of the logic cell 10 and the numberof output port of thereof is each one here, depending on the circuitconfiguration of the logic cell 10, a plurality of input ports may beprovided like the port A1. Furthermore, a plurality of output ports maybe provided like the port Y1.

The port A1 and the port Y1 are provided in the wiring layer MB-1. Twologic cells 10 are electrically connected to each other through thewiring of the wiring layer MB-1 or the wiring of the wiring layer MB-2.FIGS. 1C and 1D schematically illustrate the connection between the twologic cells 10. In an example of FIG. 1C, the port Y1 of the logic cell10 is electrically connected to the port A1 of another logic cell 10through the wiring of the wiring layer MB-2. In an example of FIG. 1D,the port Y1 of the logic cell 10 is electrically connected to the portA1 of another logic cell 10 through the wiring of the wiring layer MB-1.In the semiconductor device 100, the logic circuit 10 a is composed ofthe transistors DE1 and the wirings that are provided in the layersbelow the element layer DE-2, and the plurality of logic cells 10 (logiccircuits 10 a) are electrically connected through the wirings in thelayers over the element layer DE-2.

That is, a circuit portion (logic circuit 10 a) of the logic cell 10 iscomposed of a stack (DE-1, MA-2, and MA-3) under the element layer DE-2,and the input port and the output port of the circuit portion areprovided in the wiring layer MB-1 stacked over the element layer DE-2.

<Wiring Layers>

In the semiconductor device 100, electrodes of the transistors DE1 andDE2, the wirings of the wiring layers, the plug that connects thewirings, and the like are preferably formed using a conductor with lowresistivity (e.g., aluminum or copper). When the resistance of thewirings and the like is low, parasitic resistance and parasiticcapacitance of the wirings are also low; thus, the delay of a signal canbe inhibited, leading to reduction in power consumption. Furthermore, avia hole in which the plug is formed can be reduced in size, and this isadvantageous for higher integration.

(MA-1 and MA-2)

Meanwhile, conductors of the wirings and the like of the wiring layersMA-1 and MA-2, which are formed below the element layer DE-2, need towithstand the treatment temperature in a formation process of theelement layer DE-2 (transistor DE2). Unlike a Si transistor formed usinga single crystal silicon wafer, a semiconductor region of the transistorDE2 is formed using a semiconductor deposited by a gas phase method.Thus, to improve the characteristics and reliability of the transistorDE2, the semiconductor region may be formed at treatment temperatureshigher than or equal to 400° C. Heat treatment at such high temperaturesis performed to improve the crystallinity of polycrystalline silicon,for example, in the case where the transistor DE2 is a polycrystallinesilicon transistor. In the case where the transistor DE2 is an OStransistor, heat treatment at such high temperatures is performed toreduce oxygen vacancies in an oxide semiconductor region or to reducehydrogen (H).

Therefore, the wirings and the like of the wiring layers MA-1 and MA-2are preferably formed using a conductor having resistance to heat ofapproximately 400° C. (e.g., heat in the range from 400° C. to 500° C.).Examples of such a conductor include polycrystalline silicon to which animpurity such as phosphorus is added, silicide, a refractory metal, analloy of refractory metals, and a compound of a refractory metal.Examples of refractory metals include tungsten, molybdenum, tantalum,titanium, chromium, niobium, vanadium, and platinum. Examples of analloy of refractory metals that can be used for the wirings of thewiring layers MA-1 and MA-2 include a Ta—W alloy and a Mo—W alloy.Examples of a compound of a refractory metal include titanium nitrideand tantalum nitride.

The wirings and the like of the wiring layers MA-1 and MA-2 are eacheither a single-layer conductor or a stack of conductors. The wirings ofthe wiring layers MA-1 and MA-2 and the plug connected to them arepreferably formed using tungsten or molybdenum, each of which has bothhigh heat resistance and high conductance, especially, tungsten.

(MB-1 to MB-k)

The wiring layer MB-j (j is an integer of 1 or more and k or less) isstacked over the element layer DE-2; thus, the wiring of the wiringlayer MB-j and the plug connected to the wiring can be formed using aconductor having low heat resistance but having low resistance (e.g., aconductor containing aluminum or copper as its main component). Examplesof such a low-resistance conductor include aluminum, copper, an aluminumalloy, an aluminum alloy (e.g., an Al—Mo alloy and an Al—Ti alloy)containing an element that prevents a hillock (e.g., Si, Cr, Sc, Ta, andTi), and a copper alloy (e.g., a Cu—Mo alloy and a Cu—W alloy). Thewirings of the wiring layer MB-j and the plug connected to the wiringsare each either a single-layer conductor or a stack of conductors. Inthe case where each of them is a stack of conductors, a stack of thelow-resistance conductor and the high heat-resistant conductor may beused. Such a stack can increase heat resistance of the wirings and theplug or can reduce migration. For example, in the case where a stack ofconductors is provided, a refractory metal such as titanium, molybdenum,or tungsten or a nitride thereof (titanium nitride, molybdenum nitride,or tungsten nitride) can be provided under and/or over thelow-resistance conductor. For example, the wirings and the plug can eachbe formed using three layers of conductors of titanium nitride,aluminum, and titanium nitride.

That is, for the wiring layer MB-j stacked over the element layer DE-2,a low-resistance conductor is used to achieve high-speed operation ofthe semiconductor device 100. Meanwhile, for the wiring layers MA-1 andMA-2 below the element layer DE-2, which require high heat resistancerather than low resistance, a conductor having higher resistivity thanthe conductor of the wiring layer MB-j is used. It is needless to saythat depending on the process temperature for the element layer DE-2,the wirings of the wiring layers MA-1 and MA-2 can be formed using alow-resistance conductor like the wiring of the wiring layer MB-j.

Since all the transistors of the logic cells 10 are provided in theelement layer DE-1, all the components of the logic circuits 10 a areprovided in the stack of the wiring layers MA-1 and MA-2 and the elementlayer DE-1 below the element layer DE-2 so that the logic circuits 10 acan be easily arranged and connected. Furthermore, the port A1 and theport Y1 are provided in the wiring layer MB-1 over the element layerDE-2, whereby a step of arranging the logic cells 10 and a step ofconnecting wirings between a plurality of logic cells 10 can be easilyperformed in designing the semiconductor device 100. This enhances thedesign efficiency of the semiconductor device 100. Furthermore,connecting the plurality of logic cells 10 through the low-resistancewirings of the wiring layers MB-1 and MB-2 allows the logic cell 10 tooperate at high frequencies.

Note that depending on the arrangement of the logic cells 10, it isbetter to connect the logic cells 10 through the wiring of the wiringlayer MA-2 in some cases. In such logic cell 10, the port A1 and theport Y1 are provided in the wiring layer MA-2.

<<Structural Example of Semiconductor Device>>

In the case where the logic circuit 10 a of the logic cell 10 can bedesigned with the use of the transistors DE1 of the element layer DE-1and the wirings of the wiring layer MA-1, the wiring layer MA-2 is notnecessarily provided. FIGS. 2A to 2D illustrate such structuralexamples.

The semiconductor device 101 in FIG. 2A is a modification example of thesemiconductor device 100 and is the same as the semiconductor device 100except that the wiring layer MA-2 is not provided. The semiconductordevice 101 includes a circuit composed of a plurality of logic cells 11.FIG. 2B schematically illustrates the configuration example of the logiccell 11. The logic cell 11 is a modification example of the logic cell10, and a circuit portion (logic circuit 11 a) of the logic cell 11 iscomposed of the element layer DE-1 and the wiring layer MA-1.

The logic cells 11 are connected like the logic cells 10. FIG. 2Cillustrates an example where two logic cells 11 are connected to eachother through the wiring of the wiring layer MB-2. FIG. 2D illustratesan example where two logic cells 11 are connected through the wiring ofthe wiring layer MB-1.

Although the number of input ports of the logic cell 11 and the numberof output ports thereof are each one here, depending on the circuitconfiguration of the logic cell 11, a plurality of input ports may beprovided or a plurality of output ports may be provided. The input portand the output port are placed and routed like the port A1 and the portY1. The same applies to the logic circuit 10.

Specific embodiments of the present invention will be described belowusing the semiconductor device 100 and the logic cell 10 as an example,and the same applies to the semiconductor device 101 and the logic cell11.

<<Layout Example of Logic Cell 10>>

The layout of the logic cell 10 will be described using an inverter cellas an example. FIGS. 3A and 3B schematically illustrate the layout ofthe inverter cell 20. FIG. 3A illustrates the layout of a transistor20P, a transistor 20N, and wirings of the wiring layers MA-1 and MA-2,and FIG. 3B illustrates the layout of wirings of the wiring layers MA-2and MB-1. FIG. 3A also illustrates a wiring grid 15 and grid points 15 aused in designing the element layer DE-1 and the wiring layers MA-1 andMA-2. FIG. 3B also illustrates a wiring grid 16 and grid points 16 aused in designing the wiring layers MB-1 and MB-2. Note that L₁₅ and L₁₆are grid intervals.

The transistor 20P is a p-channel transistor, and the transistor 20N isan n-channel transistor. In a region 21C, the inverter cell 20 isformed. Regions 22 p and 22 n and a wiring 23 are provided in theelement layer DE-1. In the region 22 p, the transistor 20P is formed,while in the region 22 n, the transistor 20N is formed. The regions 22 pand 22 n include impurity regions forming sources and drains of thetransistors 20P and 20N. Part of the wiring 23 forms gates of thetransistors 20N and 20P.

The wirings 24 a to 24 d are provided in the wiring layer MA-1, thewirings 25 a and 25 b are provided in the wiring layer MA-2, and thewirings 26 a and 26 b are provided in the wiring layer MB-1. Thetransistor 20P and the transistor 20N are electrically connected inseries through the wiring 26 b. The wiring 24 c forms a power supplyline (VSS line) for supplying a low power supply potential VSS. Thewiring 24 d forms a power supply line (VDD line) for supplying a highpower supply potential VDD.

The port A1 is formed using the wiring 26 a. The wiring 26 a iselectrically connected to the wiring 23 through the wirings 24 a and 25a. The port Y1 is formed using the wiring 26 b. The wiring 26 b iselectrically connected to the wiring 24 b through the wiring 25 b. Thewirings 25 a, 24 a, and 23 are provided so as to overlap with one commongrid point 15 a. Similarly, the wirings 25 b and 24 b are provided so asto overlap with one common grid point 15 a.

Since the wiring layers MB-1 and MB-2 are stacked over the element layerDE-2, L₁₆ is larger than L₁₅ in some cases. In that case, L₁₆ can havethe minimum value of the design rule for the element layer DE-2. In thecase of such a design rule, however, the grid point 16 a of the wiringlayers MB-1 and MB-2 does not overlap with the grid point 15 a of thewiring layers MA-1 and MA-2. This might decrease the efficiency ofdesigning using an automatic placer and router.

Thus, in the case where L₁₆ is larger than L₁₅, L₁₆ is set to 1.5 timesor 2 times as large as L₁₅. Here, L₁₆ is twice as large as L₁₅. Withsuch a design rule, the wiring grid 15 includes the grid point 15 aoverlapping with the grid point 16 a. Thus, enhancing the efficiency ofdesigning using an automatic placer and router is compatible withreducing an area overhead of the semiconductor device 100. Furthermore,also in the case where a circuit composed of a combination of the logiccell 10 and the transistor DE2 is designed, such a design rulecontributes to efficient designing.

<<Combination of Transistor DE2 and Logic Cell 10>>

The semiconductor device 100 can be provided with a circuit composed ofa combination of one or more transistors DE2 and the logic cell 10. Inthe case where the transistor DE2 is an OS transistor, the off-statecurrent of the OS transistor is extremely low; thus, the logic circuit10 a of the logic cell 10 can have another function or higherperformance. FIGS. 4A to 4F each illustrate an example of a circuitcomposed of a combination of an OS transistor/OS transistors and a logiccircuit. Transistors TO1 to TO3 and TO6 to TO8 in FIGS. 4A to 4F are OStransistors.

Here, an off-state current refers to a current that flows between asource and a drain when a transistor is off. In the case of an n-channeltransistor, for example, when the threshold voltage of the transistor isapproximately 0 V to 2 V, a current flowing between a source and a drainwhen a voltage between a gate and the source is negative can be referredto as an off-state current. An extremely low off-state current means,for example, that the off-state current per micrometer of channel widthis lower than or equal to 100 zA (z represents zepto and denotes afactor of 10⁻²¹). Since the off-state current is preferably as low aspossible, the normalized off-state current is preferably lower than orequal to 10 zA/mm or lower than or equal to 1 zA/mm), more preferablylower than or equal to 10 yA/mm (y represents yocto and denotes a factorof 10⁻²⁴).

An oxide semiconductor has a bandgap of 3.0 eV or higher, thus, an OStransistor has a low leakage current due to thermal excitation and, asdescribed above, an extremely low off-state current. A channel formationregion of an OS transistor is preferably formed using an oxidesemiconductor containing at least one of indium (In) and zinc (Zn).Typical examples of such an oxide semiconductor include an In—Ga—Znoxide and an In—Sn—Zn oxide. By reducing impurities serving as electrondonors, such as moisture or hydrogen, and also reducing oxygenvacancies, an i-type (intrinsic) or a substantially i-type oxidesemiconductor can be obtained. Here, such an oxide semiconductor can bereferred to as a highly-purified oxide semiconductor. By using a highlypurified oxide semiconductor, the off-state current of the OS transistorthat is normalized by channel width can be as low as severalyoctoamperes per micrometer to several zeptoamperes per micrometer. AnOS transistor and an oxide semiconductor will be described inEmbodiments 3 and 4.

A circuit 30 in FIG. 4A includes a logic circuit 34 and the transistorTO6. The logic circuit 34 corresponds to the logic circuit 10 a of thelogic cell 10. The transistor TO6 functions as a power switch forstopping supply of VSS. On/off of the transistor TO6 is controlled by asignal slp.

As illustrated in FIGS. 4B and 4C, the transistor TO6 may be providedwith a back gate. In a circuit 30-1 in FIG. 4B, a back gate of atransistor TO7 is electrically connected to a port OBG. The thresholdvoltage of the transistor TO7 can be controlled by the potential of theport OBG. In the case where a charge storage layer is provided over aninsulating layer between the back gate and a channel formation region ofthe transistor TO7, in fabricating the circuit 30-1, a step ofintroducing charge into a charge storage layer of the transistor TO7 canbe performed with the use of the port OBG. In the case where the step isperformed, the circuit 30-1 can be operated with the back gate of thetransistor TO7 brought into an electrically floating state withoutcontrol of the potential of the port OBG.

In a circuit 30-2 in FIG. 4C, a back gate of the transistor TO8 iselectrically connected to a gate thereof. Such a device structure canimprove the on-state current characteristics of the transistor TO8. Notethat the back gate of the transistor TO8 may be electrically connectedto a source or a drain thereof.

FIGS. 4D to 4F each illustrate an example of a circuit composed of acombination of a logic circuit and a backup circuit using an OStransistor/OS transistors. Providing the circuit for backing up data(state) of the logic circuit enables power gating of a semiconductordevice including the logic circuit. The backup circuit described belowcan retain data for a long time in clock gating and in power gatingowing to the extremely low off-state current of the OS transistor/OStransistors.

A circuit 31 in FIG. 4D includes a logic circuit 35 and a backup circuit36A. The logic circuit 35 corresponds to the logic circuit 10 a of thelogic cell 10. The backup circuit 36A includes a node SN1, thetransistor TO1, and a capacitor C1. The backup circuit 36A has aconfiguration similar to that of a DRAM memory cell. The node SN1 is astorage node and brought into an electrically floating state when thetransistor TO1 is turned off. The capacitor C1 is a storage capacitorfor holding the potential of the node SN1 and is electrically connectedto the node SN1 and the port PL. A gate of the transistor TO1 iselectrically connected to a port BK. A signal for controlling the backupoperation is input to the port BK. When the transistor TO1 is turned on,data of a node N35 is backed up or data held in the node SN1 is writtento the node N35. The node N35 is an internal node, an input node, or anoutput node of the logic circuit 35.

A circuit 32 in FIG. 4E includes the logic circuit 35 and a backupcircuit 36B. The backup circuit 36B is different from the backup circuit36A in that the transistor TO2 is additionally provided. The transistorTO1 and the transistor TO2 are electrically connected in series, andwhen the transistors TO1 and TO2 are turned off, the node SN1 is broughtinto an electrically floating state. A gate of the transistor TO2 iselectrically connected to a port RE. A signal for controlling therestoration operation is input to the port RE.

In the backup operation, the transistor TO1 is turned on, whereby dataof the output node (port Y1) of the logic circuit 35 is written to thenode SN1. In the restoration operation, the transistor TO2 is turned on,whereby data of the node SN1 is written to the input node (port A1) ofthe logic circuit 35. Note that a node of which data is backed up iseither the internal node or the output node of the logic circuit 35.Furthermore, a node to which data is restored is either the internalnode or the output node of the logic circuit 35.

A circuit 33 in FIG. 4F includes the logic circuit 35, a port B1, and abackup circuit 36C. The backup circuit 36C is different from the backupcircuit 36B in that the transistor TO3 is additionally provided. Thetransistor TO3 is a pass transistor that controls the electricalcontinuity between the port B1 and the port A1. A gate of the transistorTO3 is electrically connected to the port BK.

Note that the transistors TO1 to TO3 may be provided with back gateslike the transistors TO7 and TO8.

(Retention Time)

Since the transistors TO1 to TO3 are OS transistors, the backup circuits36A to 36C can retain data for a long time. For example, in the casewhere a power supply voltage is in the range from 2V to 3.5 V, thestorage capacitance of the node SN1 (capacitance of C1) is 21 fF, andthe allowable variation in the held potential of the node SN1 is lessthan 0.5 V in the backup circuit 36A, the leakage current from the nodeSN1 needs to be less than 33×10⁻²⁴ A so that the variation in the heldpotential for 10 years at 85° C. is less than the allowable variation.In the case where the leakage current of other components is lower thanthe above and a leakage current flows almost exclusively in thetransistor TO1, the transistor TO1 with a channel width of 350 nmpreferably has a leakage current per channel width of lower than93×10⁻²⁴ A/μm. That is, the use of an OS transistor as the transistorTO1 allows the backup circuit 36A to retain data for 10 years at 85° C.

In storage circuits that utilize the off-state current characteristicsof an OS transistor, for example, the backup circuits 36A to 36C, apredetermined potential keeps being supplied to the OS transistor in aretention period in some cases. For example, a potential that completelyturns off the OS transistor may keep being supplied to a gate of the OStransistor. Alternatively, a potential that makes the OS transistor in anormally-off state may keep being supplied to a back gate of the OStransistor. In such a case, the voltage is supplied to the storagecircuit in the retention period. However, little power is consumedbecause almost no current flows. Because of little power consumption,even if a predetermined voltage is applied to the storage circuit, thestorage circuit using the OS transistor can be regarded as beingsubstantially nonvolatile.

<<Example of Layered Structure of Semiconductor Device 100>>

FIG. 5 schematically illustrates a layered structure of thesemiconductor device 100. A logic cell 110, a logic cell 111, and acircuit 112 are illustrated in FIG. 5. The circuit 112 is stacked overthe logic cell 111. The circuit 112 corresponds to each of the backupcircuits illustrated in FIGS. 4C to 4E and is connected to the logiccell 111 so that data in the logic cell 111 can be backed up. Thetransistor TO1 and the capacitor C1 provided in the circuit 112 areillustrated in FIG. 5.

The semiconductor device 100 in FIG. 5 is formed in and over a singlecrystal silicon wafer 40. A plurality of Si transistors Tp and aplurality of Si transistors Tn are formed in the element layer DE-1.These Si transistors are covered with an insulating layer 41. The logiccell 110 is an inverter cell. The logic cell 111 is a logic circuit inwhich an output node of an inverter is electrically connected to theport Y1. Here, the Si transistor Tp is a p-channel transistor, and theSi transistor Tn is an n-channel transistor.

In each of layers MVA1 to MVA6, a plug for the connection between aconductor in an upper layer and a conductor in a lower layer is formed.The layers MVA1 to MVA6 include a plurality of plugs 71 to 76 providedin insulating layers 53-1 to 53-6.

The wiring layers MA-1 and MA-2 include a plurality of wirings 61 and 62provided in the insulating layers 51-1 and 51-2, respectively. Thewiring layers MB-1 to MB-3 include a plurality of wirings 64 to 66,respectively. The wirings 64 and 66 are provided in the insulatinglayers 52-1 and 52-3, respectively. The wiring 65 is formed over theinsulating layer 53-5. The wiring 65 is covered with an insulating layer44.

In the circuit 112, a wiring 67 overlapping with the wiring 65 with theinsulating layer 44 therebetween is provided, whereby the capacitor C1is formed. Note that an electrode of the capacitor C1 is not limited toan electrode formed in the wiring layer MB-2. The electrode of thecapacitor C1 needs to be formed in any of the wiring layers included inthe semiconductor device 100. The ports PL and BK are provided in thewiring layer MB-3. A gate (wiring 68) of the transistor TO1 is connectedto the port BK.

Although an example in which three wiring layers are provided over theelement layer DE-2 is described here, this example is not necessarilyemployed. Two or more wiring layers need to be provided over the elementlayer DE-2.

A plurality of OS transistors are formed in the element layer DE-2. TheOS transistor is formed over an insulating layer 42 and is covered withan insulating layer 43. The insulating layers 42 and 43 are passivationlayers for the OS transistors. In FIG. 5, the transistor TO1 among theOS transistors provided in the element layer DE-2 is illustrated. Thetransistor TO1 has a device structure similar to that of the OStransistor 800 (FIGS. 14A to 14D) described in Embodiment 3. An OStransistor with a back gate is provided in the element layer DE-2; thus,the element layer DE-2 includes the wiring layer MA-3 provided with theback gate. The wiring layer MA-3 includes a plurality of wirings 63provided in an insulating layer 51-3.

In FIG. 5, the port A1 and the port Y1 of the logic cell 110 areconnected to the wiring 65 through a plug 75. In the case where thewiring layer MA-3 is provided, a wiring for connecting logic circuitscomposed of the layers (DE-1, MA-1, and MA-2) in the logic cells 110 and111 to an input port and an output port can also be provided in thewiring layer MA-3.

In FIG. 5, the conductor having high heat resistance (e.g., tungsten) isused for the wirings 61 to 63 and the plugs 71 to 73. Meanwhile, for thewirings 64 to 67 and the plugs 74 to 76, which are formed after theelement layer DE-2, a conductor having a lower melting point and lowerresistivity than the wiring 61 and the like (e.g., Cu or Al) ispreferably used.

The transistors Tp and Tn of the element layer DE-1 are, but not limitedto, planar type transistors. The transistor Tp and Tn may havethree-dimensional structures (e.g., a FIN-type structure or a Tri-Gatetype structure). FIGS. 17A and 17B illustrate an example of a FIN-typetransistor. FIG. 17A is a cross-sectional view of the transistor in thechannel length direction, and FIG. 17B is a cross-sectional view alonge1-e2 in FIG. 17A.

In the transistor illustrated in FIGS. 17A and 17B, an active layer(also referred to as a channel formation region) 772 has a projectedshape, and a gate insulating layer 776 and a gate electrode 777 areprovided along the side surfaces and top surface thereof. Referencenumeral 710 denotes an element isolation layer. Reference numerals 771,773, 774 denote a well, a low concentration impurity region, and a highconcentration impurity region, respectively. Reference numeral 775denotes a conductive region. Reference numerals 778 and 779 denotesidewall insulating layers. Although FIGS. 17A and 17B illustrate thecase where a projection is formed by processing a single crystal siliconwafer 700, a semiconductor region with a projected shape can be formedby processing an SOI substrate.

<<Configuration Example of Processing Unit>>

Here, a processing unit will be described as a specific example of asemiconductor device designed using logic cells as elements. Asemiconductor device in FIG. 6 includes a processing unit (PU) 200 and apower supply circuit 210. The PU 200 has a function of executing aninstruction. The PU 200 includes a plurality of functional circuitsintegrated on one chip. The PU 200 further includes a processor core201, a power management unit (PMU) 202, a power switch (PSW) 203, and aclock control circuit 204. FIG. 6 illustrates an example in which thepower supply circuit 210 is provided on a chip different from a chip onwhich the PU 200 is provided. A terminal 220 is a power supply potentialterminal, and a power supply potential VDD is input from the powersupply circuit 210 to the terminal 220. Terminals 221 and 222 are signalinput terminals. A master clock signal MCLK is input to the terminal221. A signal INT is input to the terminal 222. The signal INT is aninterrupt signal for requesting interrupt processing. The signal INT isinput to the processor core 201 and the PMU 202 in the PU 200.

<Processor Core>

The processor core 201 is capable of executing an instruction and canalso be referred to as an arithmetic processing circuit or a processor(processing unit). The processor core 201 contains a logic cell as abasic element. The processor core 201 includes a logic circuit 240, aflip-flop (FF) 250, and the like, and a variety of functional circuitsare formed using these circuits. For example, the logic circuit 240 canbe a combinational circuit. The FF 250 is included in a register.

The FF 250 includes a scan flip-flop (SFF) 251 and a backup circuit 252.The SFF 251 is composed of a logic cell. The backup circuit 252 is acircuit for backing up data of the SFF 251. That is, the FF 250 can becalled a scan flop-flop having a backup function. A port Q of the FF 250is electrically connected to an input terminal of the logic circuit 240and is also electrically connected to a port SD_IN of another FF 250 toform a scan chain. Providing the FF 250 enables clock gating and powergating of the processor core 201; thus, the power consumption of the PU200 can be reduced.

FIG. 7 illustrates a configuration example of the processor core 201.The processor core 201 in FIG. 7 includes a control unit 231, a programcounter 232, a pipeline register 233, a pipeline register 234, aregister file 235, an arithmetic logic unit (ALU) 236, and a data bus237. Data is transmitted between the processor core 201 and a peripheralcircuit such as the PMU 202 or a cache through the data bus 237.

The control unit 231 has a function of decoding and executinginstructions contained in a program such as input applications bycontrolling the overall operations of the program counter 232, thepipeline register 233, the pipeline register 234, the register file 235,the ALU 236, and the data bus 237. The ALU 236 has a function ofperforming a variety of arithmetic operations such as four arithmeticoperations and logic operations. The program counter 232 is a registerhaving a function of storing the address of an instruction to beexecuted next.

The pipeline register 233 has a function of temporarily storinginstruction data. The register file 235 includes a plurality ofregisters including a general-purpose register and can store data readfrom a main memory, data obtained as a result of arithmetic operationsin the ALU 236, or the like. The pipeline register 234 has a function oftemporarily storing data used for arithmetic operations performed in theALU 236, data obtained as a result of arithmetic operations in the ALU236, or the like.

<Circuit Configuration Example of Flip-Flop>

FIG. 8 is a circuit configuration example of the FF 250. The backupcircuit 252 in FIG. 8 has a configuration similar to that of the backupcircuit 36C. The SFF 251 in FIG. 8 includes a selector (SEL) 253, an FF254, and ports VH, VL, D, Q, QB, SD, SD_IN, SE, CK, and RT.

The port VH is a power supply port for high power supply voltage VDD,and the port VL is a power supply port for low power supply voltage VSS.VDD and VSS are applied to inverters of the SEL 253, and inverters andNAND circuits (hereinafter referred to as NAND) of the FF 254. VDD isinput to the port VH through a power switch.

The ports D and SD are data input ports of the SFF 251. The port D iselectrically connected to a data output port of a logic circuit (e.g., acombinational circuit), and data is input to the port D. Restore data orscan test data is input to the port SD through the backup circuit 252.The port Q is an output port. The port Q is electrically connected to aport SD_IN of another FF 250 and a data input port of the logic circuit.The port QB outputs data whose logic is inverted from the logic of theport Q. The port QB is electrically connected to a data input port ofanother logic circuit. The port QB is provided as necessary.

The ports SE, CK, and RT are input ports for control signals. A scanenable signal is input to the port SE. The port SE is electricallyconnected to the SEL 253. A clock signal is input to the port CK. Theport CK is electrically connected to a circuit 254 a. A reset signal isinput to the port RT. The port RT is electrically connected to the NANDof the FF 254.

The SEL 253 has a function of selecting one of the ports D and SD inaccordance with the logic of the port SE and inputting data of theselected port to the FF 254. When a scan test is performed, the logic ofthe port SE is set to “H” so that data of the port SD is input to the FF254. When the FF 250 normally operates, the logic of the port SE is setto “L”, and the port D is electrically connected to the input port ofthe FF 254.

The FF 254 in FIG. 8 includes a master latch circuit and a slave latchcircuit. The circuit 254 a is a circuit for inputting clock signals,which includes ports CK1 and CKB1. The port CK1 outputs a non-invertedclock signal. The port CKB1 outputs an inverted clock signal. An analogswitch of the FF 254 is electrically connected to the ports CK1 andCKB1.

<Operation Example of Scan Flip-Flop>

FIG. 9 and FIG. 10 are timing charts each illustrating an operationexample of the FF 250. FIG. 9 illustrates an operation example of the FF250 when the PU 200 is transferred from an active mode to a sleep mode.FIG. 10 illustrates an operation example of the FF 250 when the PU 200is transferred from the sleep mode to the active mode. FIG. 9 and FIG.10 illustrate changes in the voltages (logics) of the ports VH, CK, Q,SE, SD, BK, and RE, and the node SN1. VSS is input to the port PL. InFIG. 9 and FIG. 10, the maximum voltage is VDD and the minimum voltageis VSS.

<Active Mode (Normal Operation Mode)>

In the active mode, the FF 250 performs normal operation. The FF 250functions as a flip-flop that temporarily retains data output from thelogic circuit. Here, data output from the logic circuit is input to theport D. In normal operation, the ports RE and BK are at “L” and thetransistors TO1 to TO3 are off. The port SE is at “L,” and data of theport D is input to the FF 254 by the SEL 253. The port RT is at “H.” Aclock signal is input to the port CK. In conjunction with the change ofthe port CK into “H,” the voltage (logic) of the port Q is changed.

<Scan Mode>

In the scan mode, a plurality of SFFs 251 are electrically connected inseries to form a scan chain. In the backup circuit 252, the transistorsTO1 and TO3 are turned on and the transistor TO2 is turned off. Sincethe port SE is at “H,” data of the port SD is input to the FF 254 by theSEL 253. In other words, in the scan mode, data output from the port Qof the FF 250 is input to the port SD of the FF 250 in the next stage.

(Scan Test)

In order to perform the scan test, the mode is set to the scan mode, andthe scan test data is input to the port SD_IN of the FF 250 in the firststage of the scan chain. The shift operation of the scan chain isperformed by input of a clock signal, and the scan test data is writtento each FF 250. Next, the FF 250 performs normal operation to retaindata output from the logic circuit 240. The mode is set to the scan modeagain to perform the shift operation of the scan chain. Whether thelogic circuit 240 and the FF 250 fail to operate properly can bedetermined from data output from the port Q of the FF 250 in the laststage.

(Backup Sequence)

Backup sequence is performed by transfer from the active mode to thesleep mode. In the backup sequence, clock gating (clock stop), databackup, and power gating (power-off) are performed. The mode is set tothe sleep mode by stopping supply of clocks.

In the example of FIG. 9, clock gating of the FF 250 is started at t1,and backup operation is started in the backup circuit 252. Specifically,the port CK is set to “L” and the port BK is set to “H” at t1. A periodduring which the port BK is at “H” is a backup operation period.

When the port BK is set to “H,” the transistor TO1 electrically connectsthe node SN1 to the port Q. Thus, the node SN1 remains at “L” when theport Q is at “0,” and the voltage of the node SN1 rises to “H” when theport Q is at “1.” In other words, in the period during which the port BKis at “H,” the logic of the node SN1 can be the same as the logic of theport Q. The period during which the port BK is at “H” may be determinedso that the voltage of the node SN1 rises to a “1” logical level. At t2,the port BK is set to “L” to turn off the transistors TO1 and TO3, sothat the node SN1 becomes in an electrically floating state and thebackup circuit 252 retains data.

At t3, the power is turned off to set the port RT to “L”. The voltage ofthe port VH gradually drops from VDD to VSS. The power may be turned offat t2. Furthermore, the power is turned off as necessary. Depending onthe power domain of the PU 200, the sleep mode time, or the like, powerrequired to return from the sleep mode to the active mode might behigher than power that can be reduced by power-off. In that case, theeffect of power gating cannot be obtained; thus, in the sleep mode, itis preferable that the power be not turned off and only supply of clocksignals be stopped.

(Restore Sequence)

In a restore sequence where the mode is transferred from the sleep modeto the active mode, power is turned on, data is restored, and clocks aresupplied. The mode is transferred to the active mode by starting supplyof clocks.

The power is turned on at t4. The voltage of the port VH graduallyincreases from VSS to VDD. Restoration operation is started after theport VH becomes at VDD. The ports SE and RE are set to “H” at t5. Inaddition, the port RT is set to “H”. Restoration operation is performedwhile the port RE is at “H”. The transistor TO2 is turned on and thenode SN1 is connected to the port SD. When the node SN1 is at “L,” theport SD remains at “L” When the node SN1 is “H,” the voltage of the portSD increases to “H.” The port SE is set to “H” at t6. The port SD iselectrically connected to the input port of the FF 254 by the SEL 253.In other words, data retained in the node SN1 is written to the port SD.

Note that at t5, the port SE as well as the port RE can be set to “H”.As illustrated in FIG. 10, in the case where the node SN1 is at “H,” theport SE is preferably set to “H” after the voltage of the port SD risesto the “1” logical level. This driving prevents flow-through currentfrom flowing through the FF 250.

After the logic of the port SD becomes the same as the logic of the nodeSN1, the port CK is at “H” for a certain period (from t7 to t8). In theexample of FIG. 10, one clock is input to the port CK. When the port CKis set to “H” at t7, data of the master latch circuit is written to theslave latch. The port Q is set to “0” when the port SD is at “0” at t7,and the port Q is set to “1” when the port SD is at “1”. In other words,data of the node SN1 is written to the port Q, and the FF 250 returns toa state immediately before clock gating is performed (i.e., the mode isset to the sleep mode). The restoration operation is terminated at t9 bysetting the ports SE and RE to “L”. The port D is electrically connectedto the input port of the FF 254 by the SEL 253. In the backup circuit252, the transistor TO3 is turned off and the node the node SN1 becomesin a floating state.

After SE and RE are set to “L,” the input of a clock signal is restartedat t10 after a lapse of a certain period (e.g., one clock period) to setthe FF 250 in the active mode. The FF 250 resumes normal operation.

As described above, the FF 250 is capable of backing up and restore dataat high speed, and for example, is capable of completing backupoperation and restoration operation within several clocks (2 to 5clocks). In write operation of the backup circuit 252, the node SN1 ischarged or discharged by switching operation of the transistors TO1 toTO3. In read operation of the backup circuit 252, the port SD is chargedor discharged by switching operation of the transistors TO1 to TO3.Energy required for these operations is as low as energy required for aDRAM cell. There is no need to supply power to the backup circuit 252for data retention; thus, standby power of the FF 250 can be reduced.Similarly, there is no need to supply power to the backup circuit 252 innormal operation; thus, providing the backup circuit 252 does not leadto a substantial increase in dynamic power of the FF 250.

Providing the backup circuit 252 adds parasitic capacitance of thetransistor TO1 to the port Q. However, this parasitic capacitance islower than the parasitic capacitance of a logic circuit connected to theport Q. Consequently, the normal operation of the FF 250 is notinfluenced, and providing the backup circuit 252 does not lead to asubstantial decrease in the performance of the FF 250 in the activemode. In other words, the backup circuit 252 does not influence theoperation of the PU 200.

<Power Management>

The PMU 202 has a function of controlling power gating, clock gating,and the like. Specifically, the PMU 202 is capable of controlling theprocessor core 201, the PSW 203, and the clock control circuit 204. ThePMU 202 has a function of outputting control signals to be input to theports BK, RE, and SE to the processor core 201.

The PMU 202 includes a circuit 205. The circuit 205 is capable ofmeasuring time. The PMU 202 is capable of performing power management onthe basis of data on time obtained by the circuit 205. For example, whenthe circuit 205 is a timer circuit, the PMU 202 may generate a timerinterrupt request signal. The circuit 205 is provided as necessary.

The PSW 203 is capable of controlling supply of VDD to the PU 200 inresponse to a control signal of the PMU 202. In the example of FIG. 6,the processor core 201 may include a plurality of power domains. In thatcase, supply of power to the plurality of power domains may becontrolled independently by the PSW 203. In addition, the processor core201 may include a power domain that is not power-gated. In that case,VDD may be applied to this power domain without passing through the PSW203.

The clock control circuit 204 has a function of generating andoutputting a gated clock signal from the signal MCLK. The clock controlcircuit 204 is capable of stopping supply of a clock signal to theprocessor core 201 in response to a control signal of the PMU 202. Thepower supply circuit 210 may be capable of changing the magnitude of VDDin response to a control signal of the PMU 202.

A signal SLP is output from the processor core 201 to the PMU 202. Thesignal SLP is a trigger signal for transferring the processor core 201to the sleep mode. In the processor core 201, the backup sequence of theFF 250 is executed in response to the signal SLP. When the signal SLP isinput to the PMU 202, the PMU 202 outputs a control signal fortransition from the active mode to the sleep mode to a functionalcircuit to be controlled. The PMU 202 controls the clock control circuit204 and stops supply of a clock signal to the processor core 201. Inaddition, the PMU 202 controls the PSW 203 and stops supply of power tothe processor core 201.

Processing for returning the processor core 201 from the sleep mode tothe active mode is executed by input of the signal INT. In the processorcore 201, the restore sequence of the FF 250 is executed in response tothe signal INT. When the signal INT is input to the PMU 202, the PMU 202outputs a control signal for transition from the sleep mode to theactive mode to a functional circuit to be controlled. The PMU 202controls the PSW 203 and restarts supply of power to the processor core201. In addition, the PMU 202 controls the clock control circuit 204 andrestarts supply of a clock signal to the processor core 201.

The backup sequence may be executed using the signal INT or an interruptrequest signal of the PMU 202 as a trigger. Furthermore, the restoresequence may be executed using the interrupt request signal of the PMU202 as a trigger.

<<Device Structure of PU 200 (FF 250)>>

The PU 200 is a device having a layered structure similar to that of thesemiconductor device 100 in FIG. 5. FIG. 11 is a schematic diagramillustrating the device structure of the FF 250. The SFF 251 is composedof a logic cell. Transistors of the SFF 251 are provided in the elementlayer DE-1 and are connected through wirings of the wiring layer MA-1.The ports SD and Q are provided in the wiring layer MB-1 and areconnected to the SFF 251 through wirings of the wiring layer MA-2. Thesame applies to the ports SD_IN and D. The transistors TO1 to TO3 of thebackup circuit 252 are provided in the element layer DE-2. One of a pairof electrodes of the capacitor C1 is provided in the wiring layer MB-2.

The number of elements in the backup circuit 252 is much smaller thanthe number of elements in the SFF 251; thus, there is no need to changethe circuit configuration of the logic cell composing the SFF 251 inorder to stack the backup circuit 252. In other words, the backupcircuit 252 is a backup circuit that has very broad utility.Furthermore, the PU 200 can be designed efficiently.

The backup circuit 252 consumes almost no power in normal operation andrequires significantly low power for backup operation and restorationoperation. Thus, the FF 250 provided with the backup circuit 252 ishighly suitable for normally-off computing. Even when the FF 250 isincluded, the dynamic power of the PU 200 can hardly be increased andthe performance of the PU 200 can hardly be decreased. Thus, the PU 200including the FF 250 can reduce power consumption effectively by powergating while keeping the performance.

Embodiment 2

In this embodiment, an electronic component and electronic devices andthe like including the electronic component will be described asexamples of semiconductor devices.

<Electronic Component>

FIG. 12A is a flow chart showing an example of a method for fabricatingan electronic component. The electronic component is also referred to asa semiconductor package or an IC package. This electronic component hasa plurality of standards and names depending on a terminal extractiondirection and a terminal shape. Examples of the electronic componentwill be described in this embodiment.

A semiconductor device including a transistor is completed usingdetachable components integrated on a printed wiring board through anassembly process (post-process). The post-process can be finishedthrough steps in FIG. 12A. Specifically, after an element substrateobtained in the preceding process is completed (Step S1), a dicing stepfor separating the substrate into a plurality of chips is performed(Step S2). The rear surface of the substrate is ground before Step S2.The substrate is thinned in this step to reduce warpage or the like ofthe substrate in the preceding process and to reduce the size of thecomponent.

The divided chips are separately picked up to be mounted on and bondedto a lead frame in a die bonding step (Step S3). In the die bondingstep, the chip is bonded to the lead frame by an appropriate methoddepending on a product, for example, bonding with a resin or a tape. Inthe die bonding step, the chip may be mounted on an interposer to bebonded. In a wire bonding step, lead of the lead frame is electricallyconnected to an electrode on the chip with a metal fine line (wire)(Step S4). A silver line or a gold line can be used as the metal fineline. Either ball bonding or wedge bonding can be used as wire bonding.

A molding step is performed to seal the wire bonded chip with an epoxyresin or the like (Step S5). With the molding step, the electroniccomponent is filled with the resin. The lead of the lead frame isplated. After that, the lead is cut and processed (Step S6). Thisplating process prevents rust of the lead and facilitates soldering atthe time of mounting the chip on a printed wiring board in a later step.Printing (marking) is performed on a surface of the package (Step S7).Through an inspection step (Step S8), the electronic component iscompleted (Step S9). When the electronic component includes thesemiconductor device described in the above embodiment, low powerconsumption and reduction in size of the electronic component can beachieved.

FIG. 12B is a schematic perspective view of the completed electroniccomponent. FIG. 12B is a schematic perspective view illustrating a quadflat package (QFP) as an example of the electronic component. Asillustrated in FIG. 12B, an electronic component 7000 includes a lead7001 and a circuit portion 7003. In the circuit portion 7003, variouslogic circuits such as the FFs described in Embodiment 1 are formedusing a plurality of logic cells and the transistors DE2 of the elementlayer DE-2. The electronic component 7000 is mounted on a printed wiringboard 7002, for example. When a plurality of electronic components 7000are used in combination and electrically connected to each other overthe printed wiring board 7002, the electronic components 7000 can bemounted on an electronic device. A completed circuit board 7004 isprovided in the electronic device or the like. The electronic component7000 can be used as, for example, a random access memory that storesdata or a processing unit that executes a variety of processings, suchas a CPU, a microcontroller unit (MCU), an FPGA, or a wireless IC. Whenan electronic device includes the electronic component 7000, the powerconsumption of the electronic device can be reduced. Alternatively, theelectronic device can easily have a smaller size.

The electronic component 7000 can be used as an electronic component (ICchip) of electronic devices in a wide variety of fields, such as digitalsignal processing, software-defined radio systems, avionic systems(electronic devices used in aircraft, such as communication systems,navigation systems, autopilot systems, and flight management systems),ASIC prototyping, medical image processing, voice recognition,encryption, bioinformatics, emulators for mechanical systems, and radiotelescopes in radio astronomy. Examples of such an electronic deviceinclude display devices, personal computers (PC), image reproducingdevices provided with recording media (devices which reproduce thecontent of recording media such as DVDs, Blu-ray discs, flash memories,and HDDs, and a device which includes a display portion for displayingimages), cellular phones, game machines including portable gamemachines, portable data terminals, e-book readers, cameras (e.g., videocameras and digital still cameras), wearable display devices (e.g., headmounted display devices, goggle-type display devices, glasses-typedisplay devices, armband display devices, bracelet-type display devices,and necklace-type display devices), navigation systems, audioreproducing devices (e.g., car audio systems and digital audio players),copiers, facsimiles, printers, multifunction printers, automated tellermachines (ATMs), and vending machines. FIGS. 13A to 13F illustratespecific examples of such electronic devices.

A portable game machine 900 in FIG. 13A includes a housing 901, ahousing 902, a display portion 903, a display portion 904, a microphone905, a speaker 906, an operation key 907, a stylus 908, and the like.

A portable information terminal 910 in FIG. 13B includes a housing 911,a housing 912, a display portion 913, a display portion 914, a joint915, an operation key 916, and the like. The display portion 913 isprovided in the housing 911, and the display portion 914 is provided inthe housing 912. The housings 911 and 912 are connected to each otherwith the joint 915, and an angle between the housings 911 and 912 can bechanged with the joint 915. An image displayed on the display portion913 may be switched in accordance with the angle between the housings911 and 912 at the joint 915. A display device with a touch panel may beused as the display portion 913 and/or the display portion 914.

A laptop 920 in FIG. 13C includes a housing 921, a display portion 922,a keyboard 923, a pointing device 924, and the like.

An electric refrigerator-freezer 930 in FIG. 13D includes a housing 931,a refrigerator door 932, a freezer door 933, and the like.

A video camera 940 in FIG. 13E includes a housing 941, a housing 942, adisplay portion 943, operation keys 944, a lens 945, a joint 946, andthe like. The operation keys 944 and the lens 945 are provided in thehousing 941, and the display portion 943 is provided in the housing 942.The housings 941 and 942 are connected to each other with the joint 946,and an angle between the housings 941 and 942 can be changed with thejoint 946. The direction of an image displayed on the display portion943 may be changed and display and non-display of an image may beswitched in accordance with the angle between the housings 941 and 942,for example.

A motor vehicle 950 in FIG. 13F includes a car body 951, wheels 952, adashboard 953, lights 954, and the like.

Embodiment 3

In this embodiment, an OS transistor and a semiconductor deviceincluding an OS transistor will be described.

<<Structural Example 1 of OS Transistor>

FIGS. 14A to 14D illustrate a structural example of an OS transistor.FIG. 14A is a top view illustrating a structural example of an OStransistor. FIG. 14B is a cross-sectional view along y1-y2, FIG. 14C isa cross-sectional view along x1-x2, and FIG. 14D is a cross-sectionalview along x3-x4. Here, in some cases, the direction of the line y1-y2is referred to as the channel length direction, and the direction of theline x1-x2 is referred to as the channel width direction. Note that toclarify the device structure, some components are not illustrated inFIG. 14A.

An OS transistor 800 illustrated in FIGS. 14A to 14D includes a backgate. The OS transistor 800 is formed over an insulating surface, here,over an insulating layer 821. The insulating layer 821 is formed over asurface of the substrate 820. The insulating layer 821 has a function asa base layer of the OS transistor 800. The OS transistor 800 is coveredwith an insulating layer 825. Note that the insulating layers 821 and825 can be regarded as components of the OS transistor 800. The OStransistor 800 includes an insulating layer 822, an insulating layer823, an insulating layer 824, semiconductor layers 841 to 843, aconductive layer 850, a conductive layer 851, a conductive layer 852,and a conductive layer 853. Here, the semiconductor layers 841 to 843are collectively referred to as a semiconductor region 840.

The conductive layer 850 functions as a gate electrode, and theconductive layer 853 functions as a back gate electrode. The conductivelayers 851 and 852 function as a source electrode and a drain electrode.The insulating layer 821 has a function of electrically isolating thesubstrate 820 from the conductive layer 853. The insulating layer 824serves as a gate insulating layer, and the insulating layer 823 servesas a gate insulating layer on the backchannel side.

The channel length refers to, for example, a distance between a source(a source region or a source electrode) and a drain (a drain region or adrain electrode) in a region where a semiconductor (or a portion where acurrent flows in a semiconductor when a transistor is on) and a gateelectrode overlap with each other or in a region where a channel isformed in a top view of the transistor. In one transistor, channellengths in all regions are not necessarily the same. In other words, thechannel length of one transistor is not fixed to one value in somecases. Therefore, in this specification and the like, the channel lengthis any one of values, the maximum value, the minimum value, or theaverage value in a region where a channel is formed.

The channel width refers to, for example, the length of a portion wherea source and a drain face each other in a region where a semiconductor(or a portion where a current flows in a semiconductor when a transistoris on) and a gate electrode overlap with each other or a region where achannel is formed. In one transistor, channel widths in all regions donot necessarily have the same value. In other words, the channel widthof one transistor is not fixed to one value in some cases. Therefore, inthis specification, the channel width is any one of values, the maximumvalue, the minimum value, or the average value in a region where achannel is formed.

Note that depending on transistor structures, a channel width in aregion where a channel is actually formed (hereinafter referred to as aneffective channel width) is sometimes different from a channel widthshown in a top view of a transistor (hereinafter referred to as anapparent channel width). For example, in a transistor having athree-dimensional structure, an effective channel width is greater thanan apparent channel width shown in a top view of the transistor, and itsinfluence cannot be ignored in some cases. For example, in aminiaturized transistor having a three-dimensional structure, theproportion of a channel region formed in a side surface of asemiconductor is increased in some cases. In that case, an effectivechannel width obtained when a channel is actually formed is greater thanan apparent channel width shown in the top view.

In a transistor having a three-dimensional structure, measuring aneffective channel width is difficult in some cases. For example, toestimate an effective channel width from a design value, it is necessaryto assume that the shape of a semiconductor region is known. Therefore,in the case where the shape of a semiconductor region is not knownaccurately, measuring an effective channel width accurately isdifficult.

Thus, in this specification, in a top view of a transistor, an apparentchannel width that is the length of a portion where a source and a drainface each other in a region where a semiconductor region and a gateelectrode overlap with each other is referred to as a surrounded channelwidth (SCW) in some cases. Furthermore, in this specification, the term“channel width” may denote a surrounded channel width, an apparentchannel width, or an effective channel width. Note that the values of achannel length, a channel width, an effective channel width, an apparentchannel width, a surrounded channel width, and the like can bedetermined by obtaining and analyzing a cross-sectional TEM image andthe like.

A surrounded channel width may be used to calculate the field-effectmobility, the current value per channel width, and the like of atransistor. In this case, the obtained value is sometimes different fromthe value obtained by using an effective channel width for thecalculation.

As illustrated in FIGS. 14B and 14C, the semiconductor region 840includes a portion in which the semiconductor layer 841, thesemiconductor layer 842, and the semiconductor layer 843 are stacked inthis order. The insulating layer 824 includes a region covering thestack portion. The conductive layer 850 overlaps with the stack regionwith the insulating layer 823 therebetween. The conductive layers 851and 852 are provided over the stack formed of the semiconductor layers841 and 843 and are in contact with a top surface of this stack and aside surface of the stack in the channel length direction. The stack ofthe semiconductor layers 841 and 842 and the conductive layers 851 and852 are formed by etching using the same mask.

The semiconductor layer 843 is formed to cover the semiconductor layers841 and 842 and the conductive layers 851 and 852. The insulating layer824 covers the semiconductor layer 843. Here, the semiconductor layer843 and the insulating layer 824 are etched using the same mask.

The conductive layer 850 is formed so as to surround, in the channelwidth direction, the region in which the semiconductor layers 841 to 843are stacked with the insulating layer 824 therebetween (see FIG. 14C).Therefore, a gate electric field in the vertical direction and a gateelectric field in the lateral direction are applied to this stackportion. In the OS transistor 800, the gate electric field refers to anelectric field generated by a voltage applied to the conductive layer850 (gate electrode layer). Accordingly, the whole stack portion of thesemiconductor layers 841 to 843 can be electrically surrounded by thegate electric field, so that a channel is formed in the wholesemiconductor layer 842 (bulk) in some cases. Thus, the OS transistor800 can have high on-state current.

In this specification, the transistor structure in which a semiconductorregion is surrounded by the electric field of a gate electrode layer isreferred to as a surrounded channel (s-channel) structure. The s-channelstructure can improve the frequency characteristics of the OS transistor800. Specifically, the s-channel structure can improve cutoff frequency.The s-channel structure, because of its high on-state current, issuitable for a transistor that operates at high frequency and asemiconductor device such as large-scale integration (LSI) that needs ascaled down transistor. A semiconductor device including the transistorcan operate at high frequency.

Scaling down of the OS transistor can provide a small highly integratedsemiconductor device. The OS transistor preferably has, for example, aregion where the channel length is greater than or equal to 10 nm andless than 1 μm, more preferably greater than or equal to 10 nm and lessthan 100 nm, still more preferably greater than or equal to 10 nm andless than 70 nm, yet still more preferably greater than or equal to 10nm and less than 60 nm, even still more preferably greater than or equalto 10 nm and less than 30 nm. In addition, the OS transistor preferablyhas, for example, a region where the channel width is greater than orequal to 10 nm and less than 1 μm, more preferably greater than or equalto 10 nm and less than 100 nm, still more preferably greater than orequal to 10 nm and less than 70 nm, yet still more preferably greaterthan or equal to 10 nm and less than 60 nm, even still more preferablygreater than or equal to 10 nm and less than 30 nm.

<Conductive Layer>

The conductive layers 850 to 853 each preferably have a single-layerstructure or a layered structure of a conductive film containing alow-resistance material selected from copper (Cu), tungsten (W),molybdenum (Mo), gold (Au), aluminum (Al), manganese (Mn), titanium(Ti), tantalum (Ta), nickel (Ni), chromium (Cr), lead (Pb), tin (Sn),iron (Fe), cobalt (Co), ruthenium (Ru), platinum (Pt), iridium (Ir), andstrontium (Sr), an alloy of such a low-resistance material, or acompound containing such a material as its main component. It isparticularly preferable to use a high-melting-point material which hasboth heat resistance and conductivity, such as tungsten or molybdenum.In addition, the conductive film is preferably formed using alow-resistance conductive material such as aluminum or copper. Theconductive film is more preferably formed using a Cu—Mn alloy, in whichcase manganese oxide formed at the interface with an insulatorcontaining oxygen has a function of preventing Cu diffusion.

The conductive layers 851 and 852 in the OS transistor 801 are formedusing a hard mask used for forming the stack of the semiconductor layers841 and 842. Therefore, the conductive layers 851 and 852 do not haveregions in contact with the side surfaces of the semiconductor layers841 and 842. For example, through the following steps, the semiconductorlayers 841 and 842 and the conductive layers 851 and 852 can be formed.A two-layer oxide semiconductor film including the semiconductor layers841 and 842 is formed. A single-layer or multi-layer conductive film isformed over the oxide semiconductor film. This conductive film isetched, so that a hard mask is formed. Using this hard mask, thetwo-layer oxide semiconductor film is etched to form the semiconductorlayers 841 and 842. Then, the hard mask is etched to form the conductivelayers 851 and 852.

<Semiconductor Layer>

The semiconductor layer 842 is an oxide semiconductor containing indium(In), for example. The semiconductor layer 842 can have high carriermobility (electron mobility) by containing indium, for example. Thesemiconductor layer 842 preferably contains an element M. The element Mis preferably aluminum (Al), gallium (Ga), yttrium (Y), tin (Sn), or thelike. Other elements that can be used as the element M are boron (B),silicon (Si), titanium (Ti), iron (Fe), nickel (Ni), germanium (Ge),zirconium (Zr), molybdenum (Mo), lanthanum (La), cerium (Ce), neodymium(Nd), hafnium (Hf), tantalum (Ta), tungsten (W), and the like. Note thattwo or more of these elements may be used in combination as the elementM. The element M is an element having high bonding energy with oxygen,for example. The element M is an element whose bonding energy withoxygen is higher than that of indium, for example. The element M is anelement that can increase the energy gap of the oxide semiconductor, forexample. Furthermore, the semiconductor layer 842 preferably containszinc (Zn). When the oxide semiconductor contains zinc, the oxidesemiconductor is easily crystallized in some cases.

The semiconductor layer 842 is not limited to the oxide semiconductorcontaining indium. The semiconductor layer 842 may be an oxidesemiconductor which does not contain indium and contains at least one ofzinc, gallium, and tin (e.g., a zinc tin oxide or a gallium tin oxide).For the semiconductor layer 842, an oxide with a wide energy gap isused, for example. The energy gap of the semiconductor layer 842 is, forexample, greater than or equal to 2.5 eV and less than or equal to 4.2eV, preferably greater than or equal to 2.8 eV and less than or equal to3.8 eV, more preferably greater than or equal to 3 eV and less than orequal to 3.5 eV. The semiconductor region 840 is preferably formed usinga CAAC-OS described in Embodiment 4. Alternatively, at least thesemiconductor layer 842 is preferably formed using a CAAC-OS.

Note that in the case where an oxide semiconductor of the semiconductorregion 840 is deposited by a sputtering method at a substratetemperature higher than or equal to 150° C. and lower than or equal to750° C., preferably higher than or equal to 150° C. and lower than orequal to 450° C., more preferably higher than or equal to 200° C. andlower than or equal to 420° C., CAAC-OS can be formed. Thus, a conductorprovided in the element layer DE-1 needs to withstand the depositiontemperature of the oxide semiconductor in the semiconductor device 100of Embodiment 1.

For example, the semiconductor layers 841 and 843 include one or more,or two or more elements other than oxygen contained in the semiconductorlayer 842. Since the semiconductor layers 841 and 843 include one ormore, or two or more elements other than oxygen contained in thesemiconductor layer 842, an interface state is less likely to be formedat an interface between the semiconductor layers 841 and 842 and aninterface between the semiconductor layers 842 and 843.

In the case of using an In-M-Zn oxide as the semiconductor layer 841,when the total proportion of In and M is assumed to be 100 atomic %, theproportions of In and M are preferably set to be lower than 50 atomic %and higher than 50 atomic %, respectively, more preferably lower than 25atomic % and higher than 75 atomic %, respectively. When thesemiconductor layer 841 is formed by a sputtering method, a sputteringtarget with the above composition is preferably used. For example,In:M:Zn is preferably 1:3:2.

In the case of using an In-M-Zn oxide as the semiconductor layer 842,when the total proportion of In and M is assumed to be 100 atomic %, theproportions of In and M are preferably set to be higher than 25 atomic %and lower than 75 atomic %, respectively, more preferably higher than 34atomic % and lower than 66 atomic %, respectively. When thesemiconductor layer 842 is formed by a sputtering method, a sputteringtarget with the above composition is preferably used. For example,In:M:Zn is preferably 1:1:1, 1:1:1.2, 2:1:3, 3:1:2, or 4:2:4.1. Inparticular, when a sputtering target with an atomic ratio of In to Gaand Zn of 4:2:4.1 is used, the atomic ratio of In to Ga and Zn in thesemiconductor layer 842 may be 4:2:3 or in the neighborhood of 4:2:3.

In the case of using an In-M-Zn oxide as the semiconductor layer 843,when the total proportion of In and M is assumed to be 100 atomic %, theproportions of In and M are preferably set to be lower than 50 atomic %and higher than 50 atomic %, respectively, more preferably lower than 25atomic % and higher than 75 atomic %, respectively. The semiconductorlayer 843 may be an oxide that is the same type as that of thesemiconductor layer 841. Note that the semiconductor layer 841 and/orthe semiconductor layer 843 does not necessarily contain indium in somecases. For example, the semiconductor layer 841 and/or the semiconductorlayer 843 may be gallium oxide.

<Energy Band Structure>

The function and effect of the semiconductor region 840 in which thesemiconductor layers 841, 842, and 843 are stacked will be describedwith reference to FIGS. 15A and 15B. FIG. 15A is a partial enlarged viewof an active layer (channel region) of the OS transistor 800 in FIG.14B. FIG. 15B shows an energy band structure of a portion taken alongdotted line z1-z2 (the channel formation region of the OS transistor800) in FIG. 15A.

In FIG. 15B, Ec823, Ec841, Ec842, Ec843, and Ec824 indicate the energiesat the bottom of the conduction band of the insulating layer 823, thesemiconductor layer 841, the semiconductor layer 842, the semiconductorlayer 843, and the insulating layer 824, respectively.

Here, a difference in energy between the vacuum level and the bottom ofthe conduction band (the difference is also referred to as electronaffinity) corresponds to a value obtained by subtracting an energy gapfrom a difference in energy between the vacuum level and the top of thevalence band (the difference is also referred to as an ionizationpotential). The energy gap can be measured using a spectroscopicellipsometer. The energy difference between the vacuum level and the topof the valence band can be measured using an ultraviolet photoelectronspectroscopy (UPS) device.

Since the insulating layer 823 and the insulating layer 824 areinsulators, Ec823 and Ec824 are closer to the vacuum level than Ec841,Ec842, and Ec843 (i.e., the insulating layer 823 and the insulatinglayer 824 have a lower electron affinity than the semiconductor layers841, 842, and 843).

The semiconductor layer 842 is an oxide layer having higher electronaffinity than those of the semiconductor layers 841 and 843. Forexample, as the semiconductor layer 842, an oxide having an electronaffinity higher than those of the semiconductor layers 841 and 843 bygreater than or equal to 0.07 eV and less than or equal to 1.3 eV,preferably greater than or equal to 0.1 eV and less than or equal to 0.7eV, more preferably greater than or equal to 0.15 eV and less than orequal to 0.4 eV is used. Note that electron affinity is an energy gapbetween the vacuum level and the bottom of the conduction band.

An indium gallium oxide has low electron affinity and a highoxygen-blocking property. Therefore, the semiconductor layer 843preferably contains an indium gallium oxide. The gallium atomic ratio[Ga/(In+Ga)] is, for example, higher than or equal to 70%, preferablyhigher than or equal to 80%, more preferably higher than or equal to90%. At this time, when a gate voltage is applied, a channel is formedin the semiconductor layer 842 having the highest electron affinityamong the semiconductor layers 841 to 843.

In some cases, there is a mixed region of the semiconductor layers 841and 842 between the semiconductor layers 841 and 842. Furthermore, insome cases, there is a mixed region of the semiconductor layers 842 and843 between the semiconductor layers 842 and 843. Because the mixedregion has low interface state density, a stack of the semiconductorlayers 841 to 843 has a band structure where energy at each interfaceand in the vicinity of the interface is changed continuously (continuousjunction).

At this time, electrons move mainly in the semiconductor layer 842, notin the semiconductor layers 841 and 843. As described above, when theinterface state density at the interface between the semiconductorlayers 841 and 842 and the interface state density at the interfacebetween the semiconductor layers 842 and 843 are decreased, electronmovement in the semiconductor layer 842 is less likely to be inhibitedand the on-state current of the OS transistor 800 can be increased.

As factors of inhibiting electron movement are decreased, the on-statecurrent of the transistor can be increased. For example, in the casewhere there is no factor of inhibiting electron movement, electrons areassumed to move efficiently. Electron movement is inhibited, forexample, in the case where physical unevenness in a channel formationregion is large. The electron movement is also inhibited, for example,in the case where the density of defect states is high in the channelformation region.

To increase the on-state current of the OS transistor 800, for example,root mean square (RMS) roughness of a measurement area of 1 μm×1 μm of atop surface or a bottom surface of the semiconductor layer 842 (aformation surface; here, the semiconductor layer 841) is less than 1 nm,preferably less than 0.6 nm, more preferably less than 0.5 nm, stillmore preferably less than 0.4 nm. The average surface roughness (Ra) ofthe measurement area of 1 μm×1 μm is less than 1 nm, preferably lessthan 0.6 nm, more preferably less than 0.5 nm, still more preferablyless than 0.4 nm. The maximum difference (P-V) with the measurement areaof 1 μm×1 μm is less than 10 nm, preferably less than 9 nm, morepreferably less than 8 nm, still more preferably less than 7 nm. RMSroughness, Ra, and P-V can be measured using a scanning probemicroscope.

For example, in the case where the semiconductor layer 842 containsoxygen vacancies (V_(O)), donor levels are formed by entry of hydrogeninto the sites of oxygen vacancies in some cases. A state in whichhydrogen enters the sites of oxygen vacancies is denoted by V_(O)H inthe following description in some cases. V_(O)H is a factor ofdecreasing the on-state current of the OS transistor 800 because V_(O)Hscatters electrons. Note that the sites of oxygen vacancies become morestable by entry of oxygen than by entry of hydrogen. Thus, by decreasingoxygen vacancies in the semiconductor layer 842, the on-state current ofthe OS transistor 800 can be increased in some cases.

For example, at a certain depth in the semiconductor layer 842 or in acertain region of the semiconductor layer 842, the concentration ofhydrogen measured by secondary ion mass spectrometry (SIMS) is set to behigher than or equal to 1×10¹⁶ atoms/cm³ and lower than or equal to2×10²⁰ atoms/cm³, preferably higher than or equal to 1×10¹⁶ atoms/cm³and lower than or equal to 5×10¹⁹ atoms/cm³, more preferably higher thanor equal to 1×10¹⁶ atoms/cm³ and lower than or equal to 1×10¹⁹atoms/cm³, still more preferably higher than or equal to 1×10¹⁶atoms/cm³ and lower than or equal to 5×10¹⁸ atoms/cm³.

To decrease oxygen vacancies in the semiconductor layer 842, forexample, there is a method in which excess oxygen in the insulatinglayer 823 is moved to the semiconductor layer 842 through thesemiconductor layer 841. In that case, the semiconductor layer 841 ispreferably a layer having oxygen permeability (a layer through whichoxygen passes). For example, heat treatment is performed at atemperature higher than or equal to 150° C. and lower than 600° C. afterformation of the insulating layer 825, whereby oxygen contained in aninsulating layer (e.g., the insulating layer 823) in contact with thesemiconductor region 840 is diffused to be transferred to thesemiconductor layer 842. This allows oxygen vacancies in thesemiconductor layer 842 to be filled with oxygen. The density oflocalized levels of the semiconductor layer 842 is reduced; therefore,the OS transistor 800 with excellent electrical characteristics can befabricated. Furthermore, the OS transistor 800 with high reliability andfew variations with time in electrical characteristics or few variationsin electrical characteristics due to a stress test can be fabricated.

The temperature of the heat treatment at that time can be preferablyhigher than or equal to 250° C. and lower than or equal to 500° C., morepreferably higher than or equal to 300° C. and lower than or equal to450° C. Thus, when a conductor in a lower layer of the element layerDE-2 in the semiconductor device 100 of Embodiment 1 has high heatresistance, the process temperature of the element layer DE-2 can behigh, in which case the transistor DE2 with excellent characteristicsand high reliability can be fabricated.

In the case where the OS transistor 800 has an s-channel structure, achannel is formed in the entire semiconductor layer 842. Therefore, asthe semiconductor layer 842 has larger thickness, a channel regionbecomes larger. In other words, the thicker the semiconductor layer 842is, the larger the on-state current of the OS transistor 800 is.

Moreover, the thickness of the semiconductor layer 843 is preferably assmall as possible to increase the on-state current of the OS transistor800. For example, the semiconductor layer 843 has a region with athickness of less than 10 nm, preferably less than or equal to 5 nm,more preferably less than or equal to 3 nm. Meanwhile, the semiconductorlayer 843 has a function of blocking entry of elements other than oxygen(such as hydrogen and silicon) contained in the adjacent insulator intothe semiconductor layer 842 where a channel is formed. Thus, thesemiconductor layer 843 preferably has a certain thickness. For example,the semiconductor layer 843 may have a region with a thickness ofgreater than or equal to 0.3 nm, preferably greater than or equal to 1nm, more preferably greater than or equal to 2 nm. The semiconductorlayer 843 preferably has an oxygen blocking property to inhibit outwarddiffusion of oxygen released from the insulating layers 823 and 824 andthe like.

To improve the reliability of the OS transistor 800, preferably, thethickness of the semiconductor layer 841 is large and the thickness ofthe semiconductor layer 843 is small. For example, the semiconductorlayer 841 has a region with a thickness of greater than or equal to 10nm, preferably greater than or equal to 20 nm, more preferably greaterthan or equal to 40 nm, still more preferably greater than or equal to60 nm. When the thickness of the semiconductor layer 841 is made large,a distance from an interface between the adjacent insulator and thesemiconductor layer 841 to the semiconductor layer 842 in which achannel is formed can be large. Note that the semiconductor layer 841has a region with a thickness of, for example, less than or equal to 200nm, preferably less than or equal to 120 nm, more preferably less thanor equal to 80 nm because the productivity of the semiconductor devicemight be decreased.

In order that the OS transistor 800 have stable electricalcharacteristics, it is effective to make the semiconductor layer 842intrinsic or substantially intrinsic by reducing the concentration ofimpurities in the semiconductor region 840. Note that in thisspecification and the like, the carrier density of a substantiallyintrinsic oxide semiconductor film is higher than or equal to 1×10⁻⁹/cm³and lower than 8×10¹¹/cm³, preferably lower than 1×10¹¹/cm³, morepreferably lower than 1×10¹⁰/cm³.

In the oxide semiconductor, hydrogen, nitrogen, carbon, silicon, and ametal element other than a main component are impurities. For example,hydrogen and nitrogen form donor levels to increase the carrier density,and silicon forms impurity levels in the oxide semiconductor. Theimpurity levels serve as traps and might cause the electriccharacteristics of the transistor to deteriorate. Therefore, it ispreferable to reduce the concentration of the impurities in thesemiconductor layers 841 to 843 and at interfaces between thesemiconductor layers.

For example, a region in which the concentration of silicon is higherthan or equal to 1×10¹⁶ atoms/cm³ and lower than 1×10¹⁹ atoms/cm³ isprovided between the semiconductor layers 841 and 842. The concentrationof silicon is preferably higher than or equal to 1×10¹⁶ atoms/cm³ andlower than 5×10¹⁸ atoms/cm³, more preferably higher than or equal to1×10¹⁶ atoms/cm³ and lower than 2×10¹⁸ atoms/cm³. A region in which theconcentration of silicon is higher than or equal to 1×10¹⁶ atoms/cm³ andlower than 1×10¹⁹ atoms/cm³ is provided between the semiconductor layers842 and 843. The concentration of silicon is preferably higher than orequal to 1×10¹⁶ atoms/cm³ and lower than 5×10¹⁸ atoms/cm³, morepreferably higher than or equal to 1×10¹⁶ atoms/cm³ and lower than2×10¹⁸ atoms/cm³. The concentration of silicon can be measured by SIMS.

It is preferable to reduce the concentration of hydrogen in thesemiconductor layers 841 and 843 in order to reduce the concentration ofhydrogen in the semiconductor layer 842. The semiconductor layers 841and 843 each have a region in which the concentration of hydrogen ishigher than or equal to 1×10¹⁶ atoms/cm³ and lower than or equal to2×10²⁰ atoms/cm³. The concentration of hydrogen is preferably higherthan or equal to 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁹atoms/cm³, more preferably higher than or equal to 1×10¹⁶ atoms/cm³ andlower than or equal to 1×10¹⁹ atoms/cm³, still more preferably higherthan or equal to 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁸atoms/cm³. The concentration of hydrogen can be measured by SIMS.

It is preferable to reduce the concentration of nitrogen in thesemiconductor layers 841 and 843 in order to reduce the concentration ofnitrogen in the semiconductor layer 842. The semiconductor layers 841and 843 each have a region in which the concentration of nitrogen ishigher than or equal to 1×10¹⁶ atoms/cm³ and lower than 5×10¹⁹atoms/cm³. The concentration of nitrogen is preferably higher than orequal to 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁸ atoms/cm³,more preferably higher than or equal to 1×10¹⁶ atoms/cm³ and lower thanor equal to 1×10¹⁸ atoms/cm³, still more preferably higher than or equalto 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁷ atoms/cm³. Theconcentration of nitrogen can be measured by SIMS.

A transistor in which the above highly purified oxide semiconductor isused for a channel formation region exhibits an extremely low off-statecurrent. When the voltage between a source and a drain is set at about0.1 V, 5 V, or 10 V, for example, the off-state current standardized onthe channel width of the transistor can be as low as severalyoctoamperes per micrometer to several zeptoamperes per micrometer.

FIGS. 14A to 14D illustrate examples in which the semiconductor region840 has a three-layer structure; however, one embodiment of the presentinvention is not limited thereto. For example, the semiconductor region840 may have a two-layer structure without the semiconductor layer 841or 843. Alternatively, the semiconductor region 840 can have afour-layer structure in which a semiconductor layer similar to thesemiconductor layers 841 to 843 is provided over or under thesemiconductor layer 841 or over or under the semiconductor layer 843.Alternatively, the semiconductor region 840 can have an n-layerstructure (n is an integer of 5 or more) in which semiconductor layerssimilar to the semiconductor layers 841 to 843 are provided at two ormore of the following positions: over the semiconductor layer 841, underthe semiconductor layer 841, over the semiconductor layer 843, and underthe semiconductor layer 843.

In the case where the OS transistor 800 has no back gate electrode,neither the conductive layer 853 nor the insulating layer 822 isprovided, and the insulating layer 823 is formed over the insulatinglayer 821.

<Insulating Layers>

The insulating layers 821 to 825 are each formed using an insulatingfilm having a single-layer structure or a layered structure. Examples ofthe material of an insulating film include aluminum oxide, magnesiumoxide, silicon oxide, silicon oxynitride, silicon nitride oxide, siliconnitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide,lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide.

In this specification, an oxynitride refers to a compound that containsmore oxygen than nitrogen, and a nitride oxide refers to a compound thatcontains more nitrogen than oxygen. In this specification and the like,an oxide whose nitrogen concentration is lower than 1 atomic % can alsobe used as an insulating material.

The insulating layers 823 and 824 each preferably contain an oxidebecause they are in contact with the semiconductor region 840. Inparticular, the insulating layers 823 and 824 each preferably contain anoxide material from which part of oxygen is released by heating. Theinsulating layers 823 and 824 each preferably contain an oxidecontaining oxygen more than that in the stoichiometric composition. Partof oxygen is released by heating from an oxide film containing oxygenmore than that in the stoichiometric composition. Oxygen released fromthe insulating layers 823 and 824 is supplied to the semiconductorregion 840 that is an oxide semiconductor, so that oxygen vacancies inthe oxide semiconductor can be reduced. Consequently, changes in theelectrical characteristics of the transistor can be reduced and thereliability of the transistor can be improved.

The oxide film containing oxygen more than that in the stoichiometriccomposition is an oxide film of which the amount of released oxygenconverted into oxygen atoms is greater than or equal to 1.0×10¹⁸atoms/cm³, preferably greater than or equal to 3.0×10²⁰ atoms/cm³ inthermal desorption spectroscopy (TDS) analysis. Note that thetemperature of the film surface in the TDS analysis is preferably higherthan or equal to 100° C. and lower than or equal to 700° C., or higherthan or equal to 100° C. and lower than or equal to 500° C.

The insulating layers 821 and 825 each preferably have a passivationfunction of preventing oxygen contained in the insulating layers 823 and824 from being decreased. The insulating layers 821 and 825 eachpreferably have a function of blocking oxygen, hydrogen, water, analkali metal, an alkaline earth metal, and the like. The insulatinglayers 821 and 825 can prevent outward diffusion of oxygen from thesemiconductor region 840 and entry of hydrogen, water, or the like intothe semiconductor region 840 from the outside. The insulating layers 821and 825 may each be formed using, for example, at least one insulatinglayer of silicon nitride, silicon nitride oxide, aluminum nitride,aluminum nitride oxide, aluminum oxide, aluminum oxynitride, galliumoxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafniumoxide, hafnium oxynitride, or the like so that they can have such afunction.

<Charge Trap Layer>

While the threshold voltage of a Si transistor can be easily controlledby channel doping, the threshold voltage of an OS transistor isdifficult to change effectively by channel doping. In an OS transistor,the threshold voltage can be changed by injecting electrons into acharge trap layer. For example, the injection of electrons into thecharge trap layer can be performed with the use of the tunnel effect Byapplying a positive voltage to the conductive layer 853, tunnelelectrons are injected into the charge trap layer.

In the OS transistor 800, a charge trap layer can be provided over theinsulating layer 823. An example of the charge trap layer is aninsulating layer formed using hafnium oxide, aluminum oxide, tantalumoxide, aluminum silicate, or the like. The insulating layer 823 can havea three-layer structure of a silicon oxide layer, a hafnium oxide layer,and a silicon oxide layer, for example.

<Substrate>

As the substrate 820, an insulator substrate, a semiconductor substrate,or a conductor substrate can be used, for example. As the insulatorsubstrate, a glass substrate, a quartz substrate, a sapphire substrate,a stabilized zirconia substrate (e.g., an yttria-stabilized zirconiasubstrate), or a resin substrate can be used, for example. As thesemiconductor substrate, a semiconductor substrate of silicon,germanium, or the like, or a compound semiconductor substrate of siliconcarbide, silicon germanium, gallium arsenide, indium phosphide, zincoxide, or gallium oxide can be used, for example. The semiconductorsubstrate can be either a bulk semiconductor substrate or a silicon oninsulator (SOI) substrate in which a semiconductor layer is provided fora semiconductor substrate with an insulating region positionedtherebetween. As the conductor substrate, a graphite substrate, a metalsubstrate, an alloy substrate, a conductive resin substrate, or the likecan be used. A substrate including a metal nitride, a substrateincluding a metal oxide, or the like can be used. An insulator substrateprovided with a conductor or a semiconductor, a semiconductor substrateprovided with a conductor or an insulator, a conductor substrateprovided with a semiconductor or an insulator, or the like can be used.Alternatively, any of these substrates over which an element is providedmay be used. As the element provided over the substrate, a capacitor, aresistor, a switching element, a light-emitting element, a memoryelement, or the like can be used.

A flexible substrate may be used as the substrate 820. As a method forproviding a transistor over a flexible substrate, there is a method inwhich a transistor is formed over a non-flexible substrate (e.g., asemiconductor substrate), and then the transistor is separated andtransferred to the substrate 820, which is a flexible substrate. In thatcase, a separation layer is preferably provided between the non-flexiblesubstrate and the transistor. As the substrate 820, a sheet, a film, orfoil containing a fiber can be used. The substrate 820 may haveelasticity. The substrate 820 may have a property of returning to itsoriginal shape when bending or pulling is stopped. Alternatively, thesubstrate 820 may have a property of not returning to its originalshape. The thickness of the substrate 820 is, for example, greater thanor equal to 5 μm and less than or equal to 700 μm, preferably greaterthan or equal to 10 μm and less than or equal to 500 μm, more preferablygreater than or equal to 15 μm and less than or equal to 300 μm. Whenthe substrate 820 has a small thickness, the weight of the semiconductordevice can be reduced. When the substrate 820 has a small thickness,even in the case of using glass or the like, the substrate 820 may haveelasticity or a property of returning to its original shape when bendingor pulling is stopped. Therefore, an impact applied to the semiconductordevice over the substrate 820, which is caused by dropping or the like,can be reduced. That is, the semiconductor device can have highdurability.

For the flexible substrate 820, metal, an alloy, resin, glass, or fiberthereof can be used, for example. The flexible substrate preferably hasa lower coefficient of linear expansion because deformation due to anenvironment is suppressed. The flexible substrate is preferably formedusing, for example, a material whose coefficient of linear expansion islower than or equal to 1×10⁻³/K, lower than or equal to 5×10⁻⁵/K, orlower than or equal to 1×10⁻⁵/K. Examples of the resin includepolyester, polyolefin, polyamide (e.g., nylon or aramid), polyimide,polycarbonate, acrylic, and polytetrafluoroethylene (PTFE). Inparticular, aramid is preferably used as the material of the flexiblesubstrate because of its low coefficient of linear expansion.

<<Structural Example 2 of OS Transistor>>

The semiconductor layer 843 and the insulating layer 824 may be etchedusing the conductive layer 850 as a mask. FIG. 16A illustrates astructural example of an OS transistor fabricated through such a step.In the OS transistor 801 in FIG. 16A, end portions of the semiconductorlayer 843 and the insulating layer 824 are substantially aligned with anend portion of the conductive layer 850. The semiconductor layer 843 andthe insulating layer 824 are provided only below the conductive layer850.

<<Structural Example 3 of OS Transistor>>

An OS transistor 801 in FIG. 16B has a device structure in whichconductive layers 855 and 856 are added to the OS transistor 801. A pairof electrodes functioning as a source electrode and a drain electrode ofthe OS transistor 802 is formed using a stack of the conductive layers851 and 855 and a stack of the conductive layers 852 and 856.

The conductive layers 855 and 856 are formed using a single-layer ormultilayer conductor. The conductive layers 855 and 856 can be formedusing, for example, a conductor containing one or more kinds of boron,nitrogen, oxygen, fluorine, silicon, phosphorus, aluminum, titanium,chromium, manganese, cobalt, nickel, copper, zinc, gallium, yttrium,zirconium, molybdenum, ruthenium, silver, indium, tin, tantalum, andtungsten. An alloy film or a compound may be used, for example, and aconductor containing aluminum, a conductor containing copper andtitanium, a conductor containing copper and manganese, a conductorcontaining indium, tin, and oxygen, a conductor containing titanium andnitrogen, or the like may be used as the conductor.

The conductive layers 855 and 856 may have a property of transmittingvisible light. Alternatively, the conductive layers 855 and 856 may havea property of not transmitting visible light, ultraviolet light,infrared light, or an X-ray by reflecting or absorbing it. In somecases, such a property can suppress a change in the electricalproperties of the OS transistor 802 due to stray light.

The conductive layers 855 and 856 may preferably be formed using a layerthat does not form a Schottky barrier with the semiconductor layer 842or the like. Accordingly, the on-state characteristics of the OStransistor 802 can be improved.

The conductive layers 855 and 856 preferably have higher resistance thanthe conductive layers 851 and 852 according to circumstances. Theconductive layers 855 and 856 preferably have lower resistance than thechannel (the semiconductor layer 842) of the OS transistor 802 accordingto circumstances. For example, the resistivity of the conductive layers855 and 856 is set to higher than or equal to 0.1 Ωcm and lower than orequal to 100 Ωcm, higher than or equal to 0.5 Ωcm and lower than orequal to 50 Ωcm, or higher than or equal to 1 Ωcm and lower than orequal to 10 Ωcm. The conductive layers 855 and 856 having resistivitywithin the above range can reduce electric field concentration in aboundary portion between the channel and the drain. Therefore, a changein electrical characteristics of the OS transistor 802 can besuppressed. In addition, punch-through current generated by an electricfield from the drain can be reduced. Thus, a transistor with smallchannel length can have favorable saturation characteristics. Note thatin a circuit configuration where the source and the drain do notinterchange, only one of the conductive layers 855 and 856 (e.g., thelayer on the drain side) is preferably provided according tocircumstances.

<<Structural Example 4 of OS Transistor>>

In the OS transistor 800 in FIGS. 14A to 14D, the conductive layers 851and 852 may be in contact with side surfaces of the semiconductor layers841 and 842. Such a structural example is illustrated in FIG. 16C. In anOS transistor 803 in FIG. 16C, the conductive layers 851 and 852 may bein contact with side surfaces of the semiconductor layers 841 and 842.

In the fabrication process of the semiconductor device, insulators,conductors, and semiconductors can be formed by a sputtering method, achemical vapor deposition (CVD) method (including a thermal CVD method,a metal organic CVD (MOCVD) method, a plasma enhanced CVD (PECVD)method, and the like), a molecular beam epitaxy (MBE) method, an atomiclayer deposition (ALD) method, a pulsed laser deposition (PLD) method,or the like. For example, it is preferable that insulating films beformed by a CVD method, more preferably a PECVD method because coveragecan be further improved. In the case where a CVD method is employed forfilm formation, it is preferable to use a thermal CVD method, an MOCVDmethod, or an ALD method in order to reduce plasma damage. In the casewhere a sputtering method is employed for film formation, afacing-target-type sputtering apparatus, a parallel-plate-typesputtering apparatus, or the like can be used. For example, thesemiconductor layer 842 of the semiconductor region 840 is preferablyformed with a facing-target-type sputtering apparatus.

Embodiment 4 <<Oxide Semiconductor Structure>>

In this embodiment, the structure of an oxide semiconductor will bedescribed below.

An oxide semiconductor is classified into a single crystal oxidesemiconductor and a non-single-crystal oxide semiconductor. Examples ofa non-single-crystal oxide semiconductor include a c-axis alignedcrystalline oxide semiconductor (CAAC-OS), a polycrystalline oxidesemiconductor, a nanocrystalline oxide semiconductor (nc-OS), anamorphous-like oxide semiconductor (a-like OS), and an amorphous oxidesemiconductor.

From another perspective, an oxide semiconductor is classified into anamorphous oxide semiconductor and a crystalline oxide semiconductor.Examples of a crystalline oxide semiconductor include a single crystaloxide semiconductor, a CAAC-OS, a polycrystalline oxide semiconductor,and an nc-OS.

It is known that an amorphous structure is generally defined as beingmetastable and unfixed, and being isotropic and having no non-uniformstructure. In other words, an amorphous structure has a flexible bondangle and a short-range order but does not have a long-range order.

This means that an inherently stable oxide semiconductor cannot beregarded as a completely amorphous oxide semiconductor. Moreover, anoxide semiconductor that is not isotropic (e.g., an oxide semiconductorthat has a periodic structure in a microscopic region) cannot beregarded as a completely amorphous oxide semiconductor. Note that ana-like OS has a periodic structure in a microscopic region, but at thesame time has a void and thus has an unstable structure. For thisreason, an a-like OS has physical properties similar to those of anamorphous oxide semiconductor.

<CAAC-OS>

A CAAC-OS is an oxide semiconductor having a plurality of c-axis alignedcrystal parts (also referred to as pellets).

In a combined analysis image (also referred to as a high-resolution TEMimage) of a bright-field image and a diffraction pattern of a CAAC-OS,which is obtained using a transmission electron microscope (TEM), aplurality of pellets can be observed. However, in the high-resolutionTEM image, a boundary between pellets, that is, a grain boundary is notclearly observed. Thus, in the CAAC-OS, a reduction in electron mobilitydue to the grain boundary is less likely to occur.

The CAAC-OS observed with a TEM will be described below. It can be foundfrom a high-resolution TEM image of a cross section of the CAAC-OSobserved from the direction substantially parallel to the sample surfacethat metal atoms are arranged in a layered manner in a pellet. Eachmetal atom layer has a configuration reflecting unevenness of a surfaceover which the CAAC-OS is formed (hereinafter, the surface is referredto as a formation surface) or a top surface of the CAAC-OS, and isarranged parallel to the formation surface or the top surface of theCAAC-OS.

In addition, according to the high-resolution TEM image, the CAAC-OS hasa characteristic atomic arrangement. The size of a pellet is greaterthan or equal to 1 nm and less than or equal to 3 nm, and the size of aspace caused by the tilt of the pellets is approximately 0.8 nm.Therefore, the pellet can also be referred to as a nanocrystal (nc).Furthermore, the CAAC-OS can also be referred to as an oxidesemiconductor including c-axis aligned nanocrystals (CANC).

From a Cs-corrected high-resolution TEM image of a plane of the CAAC-OSfilm observed from the direction substantially perpendicular to thesample surface, it can be found that metal atoms are arranged in atriangular, quadrangular, or hexagonal configuration in a pellet.However, there is no regularity of arrangement of metal atoms betweendifferent pellets.

Next, a CAAC-OS analyzed by X-ray diffraction (XRD) will be described.For example, when the structure of a CAAC-OS including an InGaZnO₄crystal is analyzed by an out-of-plane method, a peak appears at adiffraction angle (2θ) of around 31°. This peak is derived from the(009) plane of the InGaZnO₄ crystal, which indicates that crystals inthe CAAC-OS have c-axis alignment, and that the c-axes are aligned inthe direction substantially perpendicular to the formation surface orthe top surface of the CAAC-OS.

Note that in structural analysis of the CAAC-OS by an out-of-planemethod, another peak may appear when 2θ is around 36°, in addition tothe peak at 2θ of around 31°. The peak at 2θ of around 36° indicatesthat a crystal having no c-axis alignment is included in part of theCAAC-OS. In a preferable CAAC-OS whose structure is analyzed by anout-of-plane method, a peak appears when 2θ is around 31° and no peakappears when 2θ is around 36°.

On the other hand, in structural analysis of the CAAC-OS by an in-planemethod in which an X-ray is incident on a sample in the directionsubstantially perpendicular to the c-axis, a peak appears when 29 isaround 56°. This peak is attributed to the (110) plane of the InGaZnO₄crystal. In the case of the CAAC-OS, when analysis (φ scan) is performedwith 2θ fixed at around 56° and with the sample rotated using a normalvector of the sample surface as an axis (φ axis), a peak is not clearlyobserved. In contrast, in the case of a single crystal oxidesemiconductor of InGaZnO₄, when φ scan is performed with 2θ fixed ataround 56°, six peaks which are derived from crystal planes equivalentto the (110) plane are observed. Accordingly, the structural analysisusing XRD shows that the directions of a-axes and b-axes are irregularlyoriented in the CAAC-OS.

Next, a CAAC-OS analyzed by electron diffraction will be described. Forexample, when an electron beam with a probe diameter of 300 nm isincident on a CAAC-OS including an InGaZnO₄ crystal in the directionparallel to the sample surface, such a diffraction pattern (alsoreferred to as a selected-area transmission electron diffractionpattern) can be obtained. In this diffraction pattern, spots derivedfrom the (009) plane of an InGaZnO₄ crystal are included. Thus, theelectron diffraction also indicates that pellets included in the CAAC-OShave c-axis alignment and that the c-axes are aligned in the directionsubstantially perpendicular to the formation surface or the top surfaceof the CAAC-OS. Meanwhile, a ring-like diffraction pattern is observedwhen an electron beam with a probe diameter of 300 nm is incident on thesame sample in the direction perpendicular to the sample surface. Thus,the electron diffraction also indicates that the a-axes and b-axes ofthe pellets included in the CAAC-OS do not have regular alignment.

As described above, the CAAC-OS is an oxide semiconductor with highcrystallinity. Entry of impurities, formation of defects, or the likemight decrease the crystallinity of an oxide semiconductor. This meansthat the CAAC-OS has a negligible number of impurities and defects(e.g., oxygen vacancies).

Note that the impurity means an element other than the main componentsof the oxide semiconductor, such as hydrogen, carbon, silicon, or atransition metal element. For example, an element (specifically, siliconor the like) having higher strength of bonding to oxygen than a metalelement included in an oxide semiconductor extracts oxygen from theoxide semiconductor, resulting in the disorder of the atomic arrangementand reduced crystallinity of the oxide semiconductor. A heavy metal suchas iron or nickel, argon, carbon dioxide, or the like has a large atomicradius (or molecular radius), and thus disturbs the atomic arrangementof the oxide semiconductor and decreases crystallinity.

The characteristics of an oxide semiconductor having impurities ordefects might be changed by light, heat, or the like. The impuritycontained in the oxide semiconductor might serve as a carrier trap orserve as a carrier generation source. Furthermore, oxygen vacancies inthe oxide semiconductor might serve as carrier traps or serve as carriergeneration sources when hydrogen is captured therein.

The CAAC-OS having a small number of impurities and oxygen vacancies isan oxide semiconductor with low carrier density (specifically, lowerthan 8×10¹¹/cm³, preferably lower than 1×10¹¹/cm³, more preferably lowerthan 1×10¹⁰/cm³, and is higher than or equal to 1×10⁻⁹/cm³). Such anoxide semiconductor is referred to as a highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor. A CAAC-OShas a low impurity concentration and a low density of defect states.Thus, the CAAC-OS can be referred to as an oxide semiconductor havingstable characteristics.

<nc-OS>

A nc-OS has a region in which a crystal part is observed and a region inwhich a crystal part is not clearly observed in a high-resolution TEMimage. In most cases, the size of a crystal part included in the nc-OSis greater than or equal to 1 nm and less than or equal to 100 nm, orgreater than or equal to 1 nm and less than or equal to 3 nm. An oxidesemiconductor including a crystal part with a size greater than 10 nmand less than or equal to 100 nm may be referred to as amicrocrystalline oxide semiconductor. In a high-resolution TEM image ofthe nc-OS, for example, a grain boundary is not clearly observed in somecases. Note that there is a possibility that the origin of thenanocrystal is the same as that of a pellet in a CAAC-OS. Therefore, acrystal part of the nc-OS may be referred to as a pellet in thefollowing description.

In the nc-OS, a microscopic region (for example, a region with a sizegreater than or equal to 1 nm and less than or equal to 10 nm, inparticular, a region with a size greater than or equal to 1 nm and lessthan or equal to 3 nm) has a periodic atomic arrangement. There is noregularity of crystal orientation between different pellets in thenc-OS. Thus, the orientation of the whole film is not ordered.Accordingly, the nc-OS cannot be distinguished from an amorphous oxidesemiconductor and an a-like OS, depending on an analysis method. Forexample, when the nc-OS is analyzed by an out-of-plane method using anX-ray having a diameter larger than the size of a pellet, a peak whichshows a crystal plane does not appear. Furthermore, a diffractionpattern like a halo pattern is observed when the nc-OS is subjected toelectron diffraction using an electron beam with a probe diameter (e.g.,50 nm or larger) that is larger than the size of a pellet. Meanwhile,spots appear in a nanobeam electron diffraction pattern of the nc-OSwhen an electron beam having a probe diameter close to or smaller thanthe size of a pellet is applied. Moreover, in a nanobeam electrondiffraction pattern of the nc-OS, regions with high luminance in acircular (ring) pattern are shown in some cases. Furthermore, aplurality of spots is shown in a ring-like region in some cases.

Since there is no regularity of crystal orientation between the pellets(nanocrystals) as mentioned above, the nc-OS can also be referred to asan oxide semiconductor including random aligned nanocrystals (RANC) oran oxide semiconductor including non-aligned nanocrystals (NANC).

The nc-OS is an oxide semiconductor that has high regularity as comparedwith an amorphous oxide semiconductor. Therefore, the nc-OS is likely tohave a lower density of defect states than an amorphous oxidesemiconductor and an a-like OS. Note that there is no regularity ofcrystal orientation between different pellets in the nc-OS. Therefore,the nc-OS has a higher density of defect states than the CAAC-OS.

<a-Like OS>

Note that an a-like OS is an oxide semiconductor having a structurebetween the nc-OS and the amorphous oxide semiconductor. In ahigh-resolution TEM image of the a-like OS, a void may be observed.Furthermore, in the high-resolution TEM image, there are a region wherea crystal part is clearly observed and a region where a crystal part isnot observed. The a-like OS has an unstable structure because itcontains a void. Growth of the crystal part in the a-like OS is inducedby electron irradiation. In contrast, in the nc-OS and the CAAC-OS,growth of the crystal part is hardly induced by electron irradiation.Therefore, the a-like OS has an unstable structure as compared with thenc-OS and the CAAC-OS.

The a-like OS has a lower density than the nc-OS and the CAAC-OS becauseit contains a void. Specifically, the density of the a-like OS is higherthan or equal to 78.6% and lower than 92.3% of the density of the singlecrystal oxide semiconductor having the same composition. The density ofeach of the nc-OS and the CAAC-OS is higher than or equal to 92.3% andlower than 100% of the density of the single crystal oxide semiconductorhaving the same composition. Note that it is difficult to deposit anoxide semiconductor having a density of lower than 78% of the density ofthe single crystal oxide semiconductor.

For example, in the case of an oxide semiconductor having an atomicratio of In:Ga:Zn=1:1:1, the density of single crystal InGaZnO₄ with arhombohedral crystal structure is 6.357 g/cm³. Accordingly, in the caseof the oxide semiconductor having an atomic ratio of In:Ga:Zn=1:1:1, thedensity of the a-like OS is higher than or equal to 5.0 g/cm³ and lowerthan 5.9 g/cm³. For example, in the case of the oxide semiconductorhaving an atomic ratio of In:Ga:Zn=1:1:1, the density of each of thenc-OS and the CAAC-OS is higher than or equal to 5.9 g/cm³ and lowerthan 6.3 g/cm³.

Note that there is a possibility that an oxide semiconductor having acertain composition cannot exist in a single crystal structure. In thatcase, single crystal oxide semiconductors with different compositionsare combined at an adequate ratio, which makes it possible to estimatedensity equivalent to that of a single crystal oxide semiconductor withthe desired composition. The density of a single crystal oxidesemiconductor having the desired composition can be estimated using aweighted average according to the combination ratio of the singlecrystal oxide semiconductors with different compositions. Note that itis preferable to use as few kinds of single crystal oxide semiconductorsas possible to estimate the density.

As described above, oxide semiconductors have various structures andvarious properties. Note that an oxide semiconductor may be a stackincluding two or more of an amorphous oxide semiconductor, an a-like OS,an nc-OS, and a CAAC-OS, for example. Information about thisspecification and the like will be described below.

In the drawings, the size, the layer thickness, or the region may beexaggerated for clarity. Therefore, the scale is not necessarily limitedto that illustrated in the drawings. Note that in the drawings, idealexamples are schematically illustrated, and shapes or values are notlimited to those illustrated in the drawings. For example, the followingcan be included: variation in signal, voltage, or current due to noiseor difference in timing.

In this specification, terms for describing arrangement, such as “over”and “under,” may be used for convenience to describe the positionalrelation between components with reference to drawings. The positionalrelation between components is changed as appropriate in accordance withthe direction in which each component is described. Thus, there is nolimitation on terms used in this specification, and description can bemade appropriately depending on the situation.

The positional relation of circuit blocks in block diagrams arespecified for description, and even in the case where different circuitblocks have different functions in the diagrams, the different circuitblocks may be provided in an actual circuit block so that differentfunctions are achieved in the same circuit block. In addition, thefunctions of circuit blocks are specified for description, and even inthe case where one circuit block is illustrated, blocks may be providedin an actual circuit block so that processing performed by one circuitblock is performed by a plurality of circuit blocks.

In this specification and the like, the terms “film” and “layer” can beinterchanged with each other depending on the case or circumstances. Forexample, the term “conductive layer” can be changed into the term“conductive film” in some cases. Also, the term “insulating film” can bechanged into the term “insulating layer” in some cases.

In this specification and the like, trigonal and rhombohedral crystalsystems are included in a hexagonal crystal system.

In this specification and the like, the term “parallel” indicates thatthe angle formed between two straight lines is greater than or equal to−10° and less than or equal to 10°, and accordingly also includes thecase where the angle is greater than or equal to −5° and less than orequal to 5°. In addition, the term “substantially parallel” indicatesthat the angle formed between two straight lines is greater than orequal to −30° and less than or equal to 30°. The term “perpendicular”indicates that the angle formed between two straight lines is greaterthan or equal to 80° and less than or equal to 100°, and accordinglyalso includes the case where the angle is greater than or equal to 85°and less than or equal to 95°. In addition, the term “substantiallyperpendicular” indicates that the angle formed between two straightlines is greater than or equal to 60° and less than or equal to 120°.

In this specification and the like, it may be possible for those skilledin the art to constitute one embodiment of the invention even whenportions to which all the ports of an active element (e.g., a transistoror a diode), a passive element (e.g., a capacitor or a resistor), andthe like are connected are not specified. In other words, one embodimentof the invention is clear even when connection portions are notspecified. Further, in the case where a connection portion is disclosedin this specification and the like, it can be determined that oneembodiment of the invention in which a connection portion is notspecified is disclosed in this specification and the like, in somecases. In particular, in the case where the number of portions to whichthe port is connected may be more than one, it is not necessary tospecify the portions to which the port is connected. Therefore, it maybe possible to constitute one embodiment of the invention by specifyingonly portions to which some of ports of an active element (e.g., atransistor or a diode), a passive element (e.g., a capacitor or aresistor), and the like are connected.

Note that in this specification and the like, it may be possible forthose skilled in the art to specify the invention when at least theconnection portion of a circuit is specified. Alternatively, it may bepossible for those skilled in the art to specify the invention when atleast a function of a circuit is specified. In other words, when afunction of a circuit is specified, one embodiment of the presentinvention is clear, and it can be determined that the embodiment isdisclosed in this specification and the like. Therefore, when aconnection portion of a circuit is specified, the circuit is disclosedas one embodiment of the invention even when a function is notspecified, and one embodiment of the invention can be constituted.Alternatively, when a function of a circuit is specified, the circuit isdisclosed as one embodiment of the invention even when a connectionportion is not specified, and one embodiment of the invention can beconstituted.

Note that contents that are not specified in the specification and thelike can be excluded from one embodiment of the invention.Alternatively, when the range of a value that is defined by the maximumand minimum values is described, part of the range is appropriatelynarrowed or part of the range is removed, whereby one embodiment of theinvention excluding part of the range can be constituted. In thismanner, it is possible to specify the technical scope of one embodimentof the present invention so that a conventional technology is excluded,for example.

As a specific example, a diagram of a circuit including first to fifthtransistors is illustrated. In that case, it can be specified that thecircuit does not include a sixth transistor in the invention. It can bespecified that the circuit does not include a capacitor in theinvention. It can be specified that the circuit does not include a sixthtransistor with a particular connection structure in the invention. Itcan be specified that the circuit does not include a capacitor with aparticular connection structure in the invention. For example, it can bespecified that a sixth transistor whose gate is connected to a gate ofthe third transistor is not included in the invention. For example, itcan be specified that a capacitor whose first electrode is connected tothe gate of the third transistor is not included in the invention.

Note that in this specification and the like, part of a diagram or textdescribed in one embodiment can be taken out to constitute oneembodiment of the invention. Thus, in the case where a diagram or textrelated to a certain portion is described, the contents taken out frompart of the diagram or the text are also disclosed as one embodiment ofthe invention, and one embodiment of the invention can be constituted.The embodiment of the present invention is clear. Therefore, forexample, in a diagram or text in which one or more active elements(e.g., transistors or diodes), wirings, passive elements (e.g.,capacitors or resistors), conductive layers, insulating layers,semiconductor layers, organic materials, inorganic materials,components, devices, operating methods, manufacturing methods, or thelike are described, part of the diagram or the text is taken out, andone embodiment of the invention can be constituted. For example, from acircuit diagram in which N circuit elements (e.g., transistors orcapacitors; N is an integer) are provided, it is possible to take out Mcircuit elements (e.g., transistors or capacitors; M is an integer,where M<N) and constitute one embodiment of the invention. For anotherexample, it is possible to take out M layers (M is an integer, whereM<N) from a cross-sectional view in which N layers (N is an integer) areprovided and constitute one embodiment of the invention. For anotherexample, it is possible to take out M elements (M is an integer, whereM<N) from a flow chart in which N elements (N is an integer) areprovided and constitute one embodiment of the invention. For anotherexample, it is possible to take out some given elements from a sentence“A includes B, C, D, E, or F” and constitute one embodiment of theinvention, for example, “A includes B and E”, “A includes E and F”, “Aincludes C, E, and F”, or “A includes B, C, D, and E”.

In the case where at least one specific example is described in adiagram or text described in one embodiment in this specification andthe like, it will be readily appreciated by those skilled in the artthat a broader concept of the specific example can be derived.Therefore, in the diagram or the text described in one embodiment, inthe case where at least one specific example is described, a broaderconcept of the specific example is disclosed as one embodiment of theinvention, and one embodiment of the invention can be constituted. Theembodiment of the present invention is clear.

In this specification and the like, what is illustrated in at least adiagram (which may be part of the diagram) is disclosed as oneembodiment of the invention, and one embodiment of the invention can beconstituted. Therefore, when certain contents are described in adiagram, the contents are disclosed as one embodiment of the inventioneven when the contents are not described with text, and one embodimentof the invention can be constituted. In a similar manner, part of adiagram, which is taken out from the diagram, is disclosed as oneembodiment of the invention, and one embodiment of the invention can beconstituted. The embodiment of the present invention is clear.

In one embodiment of the present invention, a variety of switches can beused as a switch. A switch is brought into a conduction state or anon-conduction state (is turned on or off) to determine whether to havea current flow therethrough or not. Alternatively, the switch has afunction of selecting and changing a current path, and for example,selects a current path 1 or a current path 2. For example, an electricalswitch, a mechanical switch, or the like can be used as a switch. Thatis, any element can be used as a switch as long as it can control acurrent, without limitation to a certain element. A transistor (e.g., abipolar transistor or a metal oxide semiconductor (MOS) transistor), adiode (e.g., a PN diode, a PIN diode, a Schottky diode, ametal-insulator-metal (MIM) diode, a metal-insulator-semiconductor (MIS)diode, or a diode-connected transistor), or a logic circuit in whichsuch elements are combined can be used as a switch. An example of amechanical switch is a switch formed using a MEMS (micro electromechanical system) technology, such as a digital micromirror device(DMD). Such a switch includes an electrode which can be movedmechanically, and operates by controlling conduction and non-conductionin accordance with movement of the electrode.

In one embodiment of the present invention, there is no particularlimitation on the device structure of a capacitor intentionally providedas an element. For example, either a MIM capacitor or a MOS capacitorcan be used.

EXPLANATION OF REFERENCE

10: logic cell, 10 a: logic circuit, 11: logic cell, 11 a: logiccircuit, 15: wiring grid, 15 a: grid point, 16: wiring grid, 16 a: gridpoint, 20: inverter cell, 20N: transistor, 20P: transistor, 21C: region,22 n: region, 22 p: region, 23: wiring, 24 a: wiring, 24 b: wiring, 24c: wiring, 24 d: wiring, 25 a: wiring, 25 b: wiring, 26 a: wiring, 26 b:wiring, 30: circuit, 30-1: circuit, 30-2: circuit, 31: circuit, 32:circuit, 33: circuit, 34: logic circuit, 35: logic circuit, 36A: backupcircuit, 36B: backup circuit, 36C: backup circuit, 40: single crystalsilicon wafer, 41: insulating layer, 42: insulating layer, 43:insulating layer, 44: insulating layer, 52-1: insulating layer, 52-3:insulating layer, 53-1: insulating layer, 53-2: insulating layer, 53-3:insulating layer, 53-4: insulating layer, 53-5: insulating layer, 53-6:insulating layer, 61: wiring, 62: wiring, 63: wiring, 64: wiring, 65:wiring, 66: wiring, 67: wiring, 68: wiring, 71: plug, 72: plug, 73:plug, 74: plug, 75: plug, 76: plug, 100: semiconductor device, 101:semiconductor device, 110: logic cell, Ill: logic cell, 112: circuit,200: processing unit (PU), 201: processor core, 202: power managementunit (PMU), 203: power switch (PSW), 204: clock control circuit, 205:circuit, 210: power supply circuit, 220: terminal, 221: terminal, 222:terminal, 231: control unit, 232: program counter, 233: pipelineregister, 234: pipeline register, 235: register file, 236: arithmeticlogic unit (ALU), 237: data bus, 240: logic circuit, 250: flip-flop(FF), 251: scan flip-flop (SFF), 252: backup circuit, 253: selector(SEL), 254: flip-flop (FF), 254 a: circuit, 700: single crystal siliconwafer, 710: element isolation layer, 771: well, 772: active layer, 773:low concentration impurity region, 774: high concentration impurityregion, 775: conductive region, 776: gate insulating layer, 777: gateelectrode, 778: sidewall insulating layer, 779: sidewall insulatinglayer, 800: OS transistor, 801: OS transistor, 802: OS transistor, 803:OS transistor, 820: substrate, 821: insulating layer, 822: insulatinglayer, 823: insulating layer, 824: insulating layer, 825: insulatinglayer, 840: semiconductor region, 841: semiconductor layer, 842:semiconductor layer, 843: semiconductor layer, 850: conductive layer,851: conductive layer, 852: conductive layer, 853: conductive layer,855: conductive layer, 856: conductive layer, 900: portable gamemachine, 901: housing, 902: housing, 903: display portion, 904: displayportion, 905: microphone, 906: speaker, 907: operation key, 908: stylus,910: portable information terminal, 911: housing, 912: housing, 913:display portion, 914: display portion, 915: joint, 916: operation key,920: laptop, 921: housing, 922: display portion, 923: keyboard, 924:pointing device, 930: electric refrigerator-freezer, 931: housing, 932:refrigerator door, 933: freezer door, 940: video camera, 941: housing,942: housing, 943: display portion, 944: operation key, 945: lens, 946:joint, 950: motor vehicle, 951: car body, 952: wheels, 953: dashboard,954: lights, 7000: electronic component, 7001: lead, 7002: printedwiring substrate, 7003: circuit portion, 7004: circuit substrate, A1:port, B1: port, BK: port, C1: capacitor, CK: port, CK1: port, CKB1:port, D: port, DE1: transistor, DE2: transistor, DE-1: element layer,DE-2: element layer, L₁₅: grid interval, L₁₆: grid interval, MA-1:wiring layer, MA-2: wiring layer, MA-3: wiring layer, MB-1: wiringlayer, MB-2: wiring layer, MB-3: wiring layer, MB-k: wiring layer, MVA1:layer, MVA2: layer, MVA3: layer, MVA4: layer, MVA5: layer, MVA6: layer,N35: node, OBG: port, PL: port, Q: port, QB: port, RE: port, RT: port,SD: port, SD_IN: port, SE: port, SN1: node, Tn: Si transistor, Tp: Sitransistor, TO1: transistor, TO2: transistor, TO3: transistor, TO6:transistor, TO7: transistor, TO8: transistor, VH: port, VL: port, andY1: port

This application is based on Japanese Patent Application serial No.2015-022933 filed with Japan Patent Office on Feb. 9, 2015, the entirecontents of which are hereby incorporated by reference.

1. A semiconductor device comprising: a first element layer including afirst transistor, a plurality of first wiring layers over the firstelement layer, each first wiring layer including a plurality of firstwirings; a first interlayer insulating film located between one of theplurality of first wiring layers and adjacent one of the plurality offirst wiring layers, wherein the first interlayer insulating filmincludes a plurality of first plugs electrically connected to theplurality of first wirings; a second element layer including a secondtransistor over the plurality of first wiring layers; a plurality ofsecond wiring layers over the second element layer, each second wiringlayer including a plurality of second wirings; and a second interlayerinsulating film located between one of the plurality of second wiringlayers and adjacent one of the plurality of second wiring layers,wherein the second interlayer insulating film includes a plurality ofsecond plugs electrically connected to the plurality of second wirings.2. The semiconductor device according to claim 1, wherein the pluralityof first plugs comprise tungsten.
 3. The semiconductor device accordingto claim 1, wherein the plurality of second plugs comprise at least oneof aluminum, copper, tungsten, and titanium.
 4. The semiconductor deviceaccording to claim 1, wherein the plurality of first wirings comprise atleast one element selected from silicon, tungsten, molybdenum, tantalum,titanium, chromium, niobium, vanadium, and platinum.
 5. Thesemiconductor device according to claim 1, wherein the plurality ofsecond wirings comprise at least one element selected from aluminum,copper, titanium, tungsten, and molybdenum.
 6. The semiconductor deviceaccording to claim 1, wherein the plurality of second wirings comprisealuminum and titanium nitride.
 7. The semiconductor device according toclaim 1, wherein resistivities of the plurality of second wiring layersare lower than those of the plurality of first wiring layers.
 8. Thesemiconductor device according to claim 1, wherein the semiconductordevice includes a plurality of logic cells, and wherein an input portand an output port of one of the plurality of logic cells are providedin one of the plurality of second wiring layers.
 9. The semiconductordevice according to claim 1, wherein a channel formation region of thesecond transistor comprises an oxide semiconductor layer.
 10. Anelectronic component comprising: a chip; and a lead, wherein thesemiconductor device according to claim 1 is provided on the chip, andwherein the lead is electrically connected to the chip.
 11. Anelectronic device comprising: the semiconductor device according toclaim 1; and at least one of a display device, a touch panel, amicrophone, a speaker, an operation key, and a housing.
 12. Asemiconductor device comprising: a first element layer including a firsttransistor, a first wiring layer over the first element layer, the firstwiring layer including a plurality of first wirings; a second elementlayer including a second transistor over the first wiring layer, aplurality of second wiring layers over the second element layer, eachsecond wiring layer including a plurality of second wirings; and aninterlayer insulating film located between one of the plurality ofsecond wiring layers and adjacent one of the plurality of second wiringlayers, wherein the interlayer insulating film includes a plurality ofplugs electrically connected to the plurality of second wirings.
 13. Thesemiconductor device according to claim 12, wherein the plurality ofplugs comprise at least one of aluminum, copper, tungsten, and titanium.14. The semiconductor device according to claim 12, wherein theplurality of first wirings comprise at least one element selected fromsilicon, tungsten, molybdenum, tantalum, titanium, chromium, niobium,vanadium, and platinum.
 15. The semiconductor device according to claim12, wherein the plurality of second wirings comprise at least oneelement selected from aluminum, copper, titanium, tungsten, andmolybdenum.
 16. The semiconductor device according to claim 12, whereinthe plurality of second wirings comprise aluminum and titanium nitride.17. The semiconductor device according to claim 12, whereinresistivities of the plurality of second wiring layers are lower thanthat of the first wiring layer.
 18. The semiconductor device accordingto claim 12, wherein the semiconductor device includes a plurality oflogic cells, and wherein an input port and an output port of one of theplurality of logic cells are provided in one of the plurality of secondwiring layers.
 19. The semiconductor device according to claim 12,wherein a channel formation region of the second transistor comprises anoxide semiconductor layer.
 20. An electronic component comprising: achip; and a lead, wherein the semiconductor device according to claim 12is provided on the chip, and wherein the lead is electrically connectedto the chip.
 21. An electronic device comprising: the semiconductordevice according to claim 12; and at least one of a display device, atouch panel, a microphone, a speaker, an operation key, and a housing.